Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films

J. Kanicki; W. L. Warren; C. H. Seager; M. S. Crowder; P. M. Lenahan

doi:10.1016/S0022-3093(05)80113-9

Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films

J. Kanicki, W. L. Warren, C. H. Seager, M. S. Crowder, P. M. Lenahan

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

The electron photo-excitation from the K^- state and its subsequent trapping by K⁺ state is probably at the origin of the silicon dangling bonds (K⁰) formation during broad-band UV illumination of the N-rich amorphous silicon nitride films. Because the photo-excited electron will move towards the metal electrode the positive charge is expected to accumulate near the nitride-silicon interface with illumination time. Our data also suggest that the N-H group may be at the origin of the nitrogen dangling bonds creation in N-rich films.

Original language	English (US)
Pages (from-to)	291-294
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	137-138
Issue number	PART 1
DOIs	https://doi.org/10.1016/S0022-3093(05)80113-9
State	Published - 1991

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/S0022-3093(05)80113-9

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title = "Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films",

abstract = "The electron photo-excitation from the K- state and its subsequent trapping by K+ state is probably at the origin of the silicon dangling bonds (K0) formation during broad-band UV illumination of the N-rich amorphous silicon nitride films. Because the photo-excited electron will move towards the metal electrode the positive charge is expected to accumulate near the nitride-silicon interface with illumination time. Our data also suggest that the N-H group may be at the origin of the nitrogen dangling bonds creation in N-rich films.",

author = "J. Kanicki and Warren, {W. L.} and Seager, {C. H.} and Crowder, {M. S.} and Lenahan, {P. M.}",

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T1 - Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films

AU - Kanicki, J.

AU - Warren, W. L.

AU - Seager, C. H.

AU - Crowder, M. S.

AU - Lenahan, P. M.

PY - 1991

Y1 - 1991

N2 - The electron photo-excitation from the K- state and its subsequent trapping by K+ state is probably at the origin of the silicon dangling bonds (K0) formation during broad-band UV illumination of the N-rich amorphous silicon nitride films. Because the photo-excited electron will move towards the metal electrode the positive charge is expected to accumulate near the nitride-silicon interface with illumination time. Our data also suggest that the N-H group may be at the origin of the nitrogen dangling bonds creation in N-rich films.

AB - The electron photo-excitation from the K- state and its subsequent trapping by K+ state is probably at the origin of the silicon dangling bonds (K0) formation during broad-band UV illumination of the N-rich amorphous silicon nitride films. Because the photo-excited electron will move towards the metal electrode the positive charge is expected to accumulate near the nitride-silicon interface with illumination time. Our data also suggest that the N-H group may be at the origin of the nitrogen dangling bonds creation in N-rich films.

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films

Abstract

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