Microscopic studies of black phosphorus and its field-effect transistors

Minghu Pan, Hui Yuan, Ya Qiong Xu, Zhixian Zhou, Vincent Meunier

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this manuscript, we report atomic scale studies of electronic direct bandgap measurement of the puckered honeycomb structure of freshly cleaved black phosphorus using a high-resolution scanning tunneling spectroscopy (STS) survey. Through a combination of STM/S measurements and first-principles calculations, a model for edge reconstruction and the related edge states are also determined. Besides, we also investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial- and polarization-dependent photocurrent measurements. Our results reveal that the anisotropic feature primarily results from the directional-dependent absorption of BP crystals.

Original languageEnglish (US)
Title of host publicationLow-Dimensional Nanoscale Electronic and Photonic Devices 8
EditorsY. L. Chueh, C. O'Dwyer, M. Suzuki, S. Jin, S. W. Kim, J. H. He, J. C. Ho, Z. Fan, Q. Li, G. W. Hunter, K. Takei
PublisherElectrochemical Society Inc.
Pages93-104
Number of pages12
Edition12
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2015
EventSymposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 8 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
Number12
Volume69
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 8 - 228th ECS Meeting
Country/TerritoryUnited States
CityPhoenix
Period10/11/1510/15/15

All Science Journal Classification (ASJC) codes

  • General Engineering

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