Abstract
In this manuscript, we report atomic scale studies of electronic direct bandgap measurement of the puckered honeycomb structure of freshly cleaved black phosphorus using a high-resolution scanning tunneling spectroscopy (STS) survey. Through a combination of STM/S measurements and first-principles calculations, a model for edge reconstruction and the related edge states are also determined. Besides, we also investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial- and polarization-dependent photocurrent measurements. Our results reveal that the anisotropic feature primarily results from the directional-dependent absorption of BP crystals.
Original language | English (US) |
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Title of host publication | Low-Dimensional Nanoscale Electronic and Photonic Devices 8 |
Editors | Y. L. Chueh, C. O'Dwyer, M. Suzuki, S. Jin, S. W. Kim, J. H. He, J. C. Ho, Z. Fan, Q. Li, G. W. Hunter, K. Takei |
Publisher | Electrochemical Society Inc. |
Pages | 93-104 |
Number of pages | 12 |
Edition | 12 |
ISBN (Electronic) | 9781607685395 |
DOIs | |
State | Published - 2015 |
Event | Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 8 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015 |
Publication series
Name | ECS Transactions |
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Number | 12 |
Volume | 69 |
ISSN (Print) | 1938-6737 |
ISSN (Electronic) | 1938-5862 |
Other
Other | Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 8 - 228th ECS Meeting |
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Country/Territory | United States |
City | Phoenix |
Period | 10/11/15 → 10/15/15 |
All Science Journal Classification (ASJC) codes
- General Engineering