Microscopic studies of black phosphorus and its field-effect transistors

Minghu Pan; Hui Yuan; Ya Qiong Xu; Zhixian Zhou; Vincent Meunier

doi:10.1149/06912.0093ecst

Microscopic studies of black phosphorus and its field-effect transistors

Minghu Pan
, Hui Yuan
, Ya Qiong Xu
, Zhixian Zhou
, Vincent Meunier

Engineering Science and Mechanics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this manuscript, we report atomic scale studies of electronic direct bandgap measurement of the puckered honeycomb structure of freshly cleaved black phosphorus using a high-resolution scanning tunneling spectroscopy (STS) survey. Through a combination of STM/S measurements and first-principles calculations, a model for edge reconstruction and the related edge states are also determined. Besides, we also investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial- and polarization-dependent photocurrent measurements. Our results reveal that the anisotropic feature primarily results from the directional-dependent absorption of BP crystals.

Original language	English (US)
Title of host publication	Low-Dimensional Nanoscale Electronic and Photonic Devices 8
Editors	Y. L. Chueh, C. O'Dwyer, M. Suzuki, S. Jin, S. W. Kim, J. H. He, J. C. Ho, Z. Fan, Q. Li, G. W. Hunter, K. Takei
Publisher	Electrochemical Society Inc.
Pages	93-104
Number of pages	12
Edition	12
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06912.0093ecst
State	Published - 2015
Event	Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 8 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	12
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 8 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	10/11/15 → 10/15/15

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/06912.0093ecst

Cite this

Pan, M., Yuan, H., Xu, Y. Q., Zhou, Z., & Meunier, V. (2015). Microscopic studies of black phosphorus and its field-effect transistors. In Y. L. Chueh, C. O'Dwyer, M. Suzuki, S. Jin, S. W. Kim, J. H. He, J. C. Ho, Z. Fan, Q. Li, G. W. Hunter, & K. Takei (Eds.), Low-Dimensional Nanoscale Electronic and Photonic Devices 8 (12 ed., pp. 93-104). (ECS Transactions; Vol. 69, No. 12). Electrochemical Society Inc.. https://doi.org/10.1149/06912.0093ecst

Pan, Minghu ; Yuan, Hui ; Xu, Ya Qiong et al. / Microscopic studies of black phosphorus and its field-effect transistors. Low-Dimensional Nanoscale Electronic and Photonic Devices 8. editor / Y. L. Chueh ; C. O'Dwyer ; M. Suzuki ; S. Jin ; S. W. Kim ; J. H. He ; J. C. Ho ; Z. Fan ; Q. Li ; G. W. Hunter ; K. Takei. 12. ed. Electrochemical Society Inc., 2015. pp. 93-104 (ECS Transactions; 12).

@inproceedings{74b2085563904637b4c7b31f59c70c87,

title = "Microscopic studies of black phosphorus and its field-effect transistors",

abstract = "In this manuscript, we report atomic scale studies of electronic direct bandgap measurement of the puckered honeycomb structure of freshly cleaved black phosphorus using a high-resolution scanning tunneling spectroscopy (STS) survey. Through a combination of STM/S measurements and first-principles calculations, a model for edge reconstruction and the related edge states are also determined. Besides, we also investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial- and polarization-dependent photocurrent measurements. Our results reveal that the anisotropic feature primarily results from the directional-dependent absorption of BP crystals.",

author = "Minghu Pan and Hui Yuan and Xu, \{Ya Qiong\} and Zhixian Zhou and Vincent Meunier",

note = "Publisher Copyright: {\textcopyright} 2015 The Electrochemical Society.; Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 8 - 228th ECS Meeting ; Conference date: 11-10-2015 Through 15-10-2015",

year = "2015",

doi = "10.1149/06912.0093ecst",

language = "English (US)",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "12",

pages = "93--104",

editor = "Chueh, \{Y. L.\} and C. O'Dwyer and M. Suzuki and S. Jin and Kim, \{S. W.\} and He, \{J. H.\} and Ho, \{J. C.\} and Z. Fan and Q. Li and Hunter, \{G. W.\} and K. Takei",

booktitle = "Low-Dimensional Nanoscale Electronic and Photonic Devices 8",

edition = "12",

}

Pan, M, Yuan, H, Xu, YQ, Zhou, Z & Meunier, V 2015, Microscopic studies of black phosphorus and its field-effect transistors. in YL Chueh, C O'Dwyer, M Suzuki, S Jin, SW Kim, JH He, JC Ho, Z Fan, Q Li, GW Hunter & K Takei (eds), Low-Dimensional Nanoscale Electronic and Photonic Devices 8. 12 edn, ECS Transactions, no. 12, vol. 69, Electrochemical Society Inc., pp. 93-104, Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 8 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06912.0093ecst

Microscopic studies of black phosphorus and its field-effect transistors. / Pan, Minghu; Yuan, Hui; Xu, Ya Qiong et al.
Low-Dimensional Nanoscale Electronic and Photonic Devices 8. ed. / Y. L. Chueh; C. O'Dwyer; M. Suzuki; S. Jin; S. W. Kim; J. H. He; J. C. Ho; Z. Fan; Q. Li; G. W. Hunter; K. Takei. 12. ed. Electrochemical Society Inc., 2015. p. 93-104 (ECS Transactions; Vol. 69, No. 12).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Microscopic studies of black phosphorus and its field-effect transistors

AU - Pan, Minghu

AU - Yuan, Hui

AU - Xu, Ya Qiong

AU - Zhou, Zhixian

AU - Meunier, Vincent

PY - 2015

Y1 - 2015

N2 - In this manuscript, we report atomic scale studies of electronic direct bandgap measurement of the puckered honeycomb structure of freshly cleaved black phosphorus using a high-resolution scanning tunneling spectroscopy (STS) survey. Through a combination of STM/S measurements and first-principles calculations, a model for edge reconstruction and the related edge states are also determined. Besides, we also investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial- and polarization-dependent photocurrent measurements. Our results reveal that the anisotropic feature primarily results from the directional-dependent absorption of BP crystals.

AB - In this manuscript, we report atomic scale studies of electronic direct bandgap measurement of the puckered honeycomb structure of freshly cleaved black phosphorus using a high-resolution scanning tunneling spectroscopy (STS) survey. Through a combination of STM/S measurements and first-principles calculations, a model for edge reconstruction and the related edge states are also determined. Besides, we also investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial- and polarization-dependent photocurrent measurements. Our results reveal that the anisotropic feature primarily results from the directional-dependent absorption of BP crystals.

UR - https://www.scopus.com/pages/publications/84945940446

UR - https://www.scopus.com/pages/publications/84945940446#tab=citedBy

U2 - 10.1149/06912.0093ecst

DO - 10.1149/06912.0093ecst

M3 - Conference contribution

AN - SCOPUS:84945940446

T3 - ECS Transactions

SP - 93

EP - 104

BT - Low-Dimensional Nanoscale Electronic and Photonic Devices 8

A2 - Chueh, Y. L.

A2 - O'Dwyer, C.

A2 - Suzuki, M.

A2 - Jin, S.

A2 - Kim, S. W.

A2 - He, J. H.

A2 - Ho, J. C.

A2 - Fan, Z.

A2 - Li, Q.

A2 - Hunter, G. W.

A2 - Takei, K.

PB - Electrochemical Society Inc.

T2 - Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 8 - 228th ECS Meeting

Y2 - 11 October 2015 through 15 October 2015

ER -

Pan M, Yuan H, Xu YQ, Zhou Z, Meunier V. Microscopic studies of black phosphorus and its field-effect transistors. In Chueh YL, O'Dwyer C, Suzuki M, Jin S, Kim SW, He JH, Ho JC, Fan Z, Li Q, Hunter GW, Takei K, editors, Low-Dimensional Nanoscale Electronic and Photonic Devices 8. 12 ed. Electrochemical Society Inc. 2015. p. 93-104. (ECS Transactions; 12). doi: 10.1149/06912.0093ecst

Microscopic studies of black phosphorus and its field-effect transistors

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this