Microstructural evolution of diamond growth on iron silicide/silicon substrates by hot filament chemical vapor deposition

Jogender Singh; M. Vellaikal

doi:10.1016/0257-8972(94)90099-X

Microstructural evolution of diamond growth on iron silicide/silicon substrates by hot filament chemical vapor deposition

Jogender Singh, M. Vellaikal

Applied Research Laboratory (ARL)

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

During hot filament chemical vapor deposition (HFCVD), the presence of iron silicide on the surface of silicon substrates was found to enhance diamond nucleation density. Specimens were prepared by laser ablating iron onto the substrate, followed by isothermal annealing at 700°C. A high resolution transmission electron microscope showed that an amorphous diamond-like carbon (DLC) layer about 8-10 nm thick formed on the iron silicide phase during HFCVD. The DLC layer locally recrystallized which created a nucleation site for the subsequent growth of diamond. DLC will be a precursor layer for diamond growth.

Original language	English (US)
Pages (from-to)	131-137
Number of pages	7
Journal	Surface and Coatings Technology
Volume	64
Issue number	3
DOIs	https://doi.org/10.1016/0257-8972(94)90099-X
State	Published - Jun 1994

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0257-8972(94)90099-X

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title = "Microstructural evolution of diamond growth on iron silicide/silicon substrates by hot filament chemical vapor deposition",

abstract = "During hot filament chemical vapor deposition (HFCVD), the presence of iron silicide on the surface of silicon substrates was found to enhance diamond nucleation density. Specimens were prepared by laser ablating iron onto the substrate, followed by isothermal annealing at 700°C. A high resolution transmission electron microscope showed that an amorphous diamond-like carbon (DLC) layer about 8-10 nm thick formed on the iron silicide phase during HFCVD. The DLC layer locally recrystallized which created a nucleation site for the subsequent growth of diamond. DLC will be a precursor layer for diamond growth.",

author = "Jogender Singh and M. Vellaikal",

year = "1994",

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doi = "10.1016/0257-8972(94)90099-X",

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journal = "Surface and Coatings Technology",

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AU - Singh, Jogender

AU - Vellaikal, M.

PY - 1994/6

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N2 - During hot filament chemical vapor deposition (HFCVD), the presence of iron silicide on the surface of silicon substrates was found to enhance diamond nucleation density. Specimens were prepared by laser ablating iron onto the substrate, followed by isothermal annealing at 700°C. A high resolution transmission electron microscope showed that an amorphous diamond-like carbon (DLC) layer about 8-10 nm thick formed on the iron silicide phase during HFCVD. The DLC layer locally recrystallized which created a nucleation site for the subsequent growth of diamond. DLC will be a precursor layer for diamond growth.

AB - During hot filament chemical vapor deposition (HFCVD), the presence of iron silicide on the surface of silicon substrates was found to enhance diamond nucleation density. Specimens were prepared by laser ablating iron onto the substrate, followed by isothermal annealing at 700°C. A high resolution transmission electron microscope showed that an amorphous diamond-like carbon (DLC) layer about 8-10 nm thick formed on the iron silicide phase during HFCVD. The DLC layer locally recrystallized which created a nucleation site for the subsequent growth of diamond. DLC will be a precursor layer for diamond growth.

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EP - 137

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 3

ER -

Microstructural evolution of diamond growth on iron silicide/silicon substrates by hot filament chemical vapor deposition

Abstract

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