Microwave noise performance of AlGaN/GaN HEMTs

A. T. Ping; E. Piner; J. Redwing; M. Asif Khan; I. Adesida

doi:10.1049/el:20000152

Microwave noise performance of AlGaN/GaN HEMTs

A. T. Ping, E. Piner, J. Redwing, M. Asif Khan, I. Adesida

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Abstract

The authors have characterized the microwave noise performance of AlGaN/GaN HEMTs epitaxially grown on insulating SiC substrates. The minimum noise figure for 0.25 μm gate-length devices was measured to be 0.77dB at 5 GHz and 1.06dB at 10 GHz. The measured minimum noise figures are comparable to those exhibited by GaAs-based FETs, which demonstrates the viability of AlGaN/GaN HEMTs for low-noise applications.

Original language	English (US)
Pages (from-to)	175-176
Number of pages	2
Journal	Electronics Letters
Volume	36
Issue number	2
DOIs	https://doi.org/10.1049/el:20000152
State	Published - Jan 20 2000

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20000152

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title = "Microwave noise performance of AlGaN/GaN HEMTs",

abstract = "The authors have characterized the microwave noise performance of AlGaN/GaN HEMTs epitaxially grown on insulating SiC substrates. The minimum noise figure for 0.25 μm gate-length devices was measured to be 0.77dB at 5 GHz and 1.06dB at 10 GHz. The measured minimum noise figures are comparable to those exhibited by GaAs-based FETs, which demonstrates the viability of AlGaN/GaN HEMTs for low-noise applications.",

author = "Ping, {A. T.} and E. Piner and J. Redwing and {Asif Khan}, M. and I. Adesida",

year = "2000",

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volume = "36",

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T1 - Microwave noise performance of AlGaN/GaN HEMTs

AU - Ping, A. T.

AU - Piner, E.

AU - Redwing, J.

AU - Asif Khan, M.

AU - Adesida, I.

PY - 2000/1/20

Y1 - 2000/1/20

N2 - The authors have characterized the microwave noise performance of AlGaN/GaN HEMTs epitaxially grown on insulating SiC substrates. The minimum noise figure for 0.25 μm gate-length devices was measured to be 0.77dB at 5 GHz and 1.06dB at 10 GHz. The measured minimum noise figures are comparable to those exhibited by GaAs-based FETs, which demonstrates the viability of AlGaN/GaN HEMTs for low-noise applications.

AB - The authors have characterized the microwave noise performance of AlGaN/GaN HEMTs epitaxially grown on insulating SiC substrates. The minimum noise figure for 0.25 μm gate-length devices was measured to be 0.77dB at 5 GHz and 1.06dB at 10 GHz. The measured minimum noise figures are comparable to those exhibited by GaAs-based FETs, which demonstrates the viability of AlGaN/GaN HEMTs for low-noise applications.

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DO - 10.1049/el:20000152

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SP - 175

EP - 176

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

Microwave noise performance of AlGaN/GaN HEMTs

Abstract

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