TY - GEN
T1 - Mid-infrared designer metals
AU - Law, S.
AU - Adams, D. C.
AU - Taylor, A. M.
AU - Wasserman, D.
PY - 2012
Y1 - 2012
N2 - We demonstrate the utility of epitaxially-grown, highly-doped semiconductors as plasmonic designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro-particles fabricated from these materials are shown to support localized surface plasmon modes.
AB - We demonstrate the utility of epitaxially-grown, highly-doped semiconductors as plasmonic designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro-particles fabricated from these materials are shown to support localized surface plasmon modes.
UR - http://www.scopus.com/inward/record.url?scp=84871748830&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84871748830&partnerID=8YFLogxK
U2 - 10.1109/IPCon.2012.6358858
DO - 10.1109/IPCon.2012.6358858
M3 - Conference contribution
AN - SCOPUS:84871748830
SN - 9781457707315
T3 - 2012 IEEE Photonics Conference, IPC 2012
SP - 786
EP - 787
BT - 2012 IEEE Photonics Conference, IPC 2012
T2 - 25th IEEE Photonics Conference, IPC 2012
Y2 - 23 September 2012 through 27 September 2012
ER -