Mid-infrared designer metals

S. Law, D. C. Adams, A. M. Taylor, D. Wasserman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We demonstrate the utility of epitaxially-grown, highly-doped semiconductors as plasmonic designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro-particles fabricated from these materials are shown to support localized surface plasmon modes.

Original languageEnglish (US)
Title of host publication2012 IEEE Photonics Conference, IPC 2012
Pages786-787
Number of pages2
DOIs
StatePublished - 2012
Event25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, United States
Duration: Sep 23 2012Sep 27 2012

Publication series

Name2012 IEEE Photonics Conference, IPC 2012

Other

Other25th IEEE Photonics Conference, IPC 2012
Country/TerritoryUnited States
CityBurlingame, CA
Period9/23/129/27/12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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