Mid-infrared emission from In(Ga)Sb layers on InAs(Sb)

R. Liu; Y. Zhong; L. Yu; H. Kim; S. Law; J. M. Zuo; D. Wasserman

doi:10.1364/OE.22.024466

Mid-infrared emission from In(Ga)Sb layers on InAs(Sb)

R. Liu, Y. Zhong, L. Yu, H. Kim, S. Law, J. M. Zuo, D. Wasserman

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We demonstrate infrared light emission from thin epitaxiallygrown In(Ga)Sb layers in InAs(Sb) matrices across a wide range (3-8μm) of the mid-infrared spectral range. Our structures are characterized by x-ray diffraction, photoelectron spectroscopy, atomic force microscopy and transmission electron microscopy. Emission is characterized by temperature- and power-dependent infrared step-scan photoluminescence spectroscopy. The epitaxial In(Ga)Sb layers are observed to form either quantum wells, quantum dots, or disordered quantum wells, depending on the insertion layer and substrate material composition. The observed optical properties of the monolayer-scale insertions are correlated to their structural properties, as determined by transmission electron and atomic force microscopy.

Original language	English (US)
Pages (from-to)	24466-24477
Number of pages	12
Journal	Optics Express
Volume	22
Issue number	20
DOIs	https://doi.org/10.1364/OE.22.024466
State	Published - Oct 6 2014

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1364/OE.22.024466

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title = "Mid-infrared emission from In(Ga)Sb layers on InAs(Sb)",

abstract = "We demonstrate infrared light emission from thin epitaxiallygrown In(Ga)Sb layers in InAs(Sb) matrices across a wide range (3-8μm) of the mid-infrared spectral range. Our structures are characterized by x-ray diffraction, photoelectron spectroscopy, atomic force microscopy and transmission electron microscopy. Emission is characterized by temperature- and power-dependent infrared step-scan photoluminescence spectroscopy. The epitaxial In(Ga)Sb layers are observed to form either quantum wells, quantum dots, or disordered quantum wells, depending on the insertion layer and substrate material composition. The observed optical properties of the monolayer-scale insertions are correlated to their structural properties, as determined by transmission electron and atomic force microscopy.",

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T1 - Mid-infrared emission from In(Ga)Sb layers on InAs(Sb)

AU - Liu, R.

AU - Zhong, Y.

AU - Yu, L.

AU - Kim, H.

AU - Law, S.

AU - Zuo, J. M.

AU - Wasserman, D.

PY - 2014/10/6

Y1 - 2014/10/6

N2 - We demonstrate infrared light emission from thin epitaxiallygrown In(Ga)Sb layers in InAs(Sb) matrices across a wide range (3-8μm) of the mid-infrared spectral range. Our structures are characterized by x-ray diffraction, photoelectron spectroscopy, atomic force microscopy and transmission electron microscopy. Emission is characterized by temperature- and power-dependent infrared step-scan photoluminescence spectroscopy. The epitaxial In(Ga)Sb layers are observed to form either quantum wells, quantum dots, or disordered quantum wells, depending on the insertion layer and substrate material composition. The observed optical properties of the monolayer-scale insertions are correlated to their structural properties, as determined by transmission electron and atomic force microscopy.

AB - We demonstrate infrared light emission from thin epitaxiallygrown In(Ga)Sb layers in InAs(Sb) matrices across a wide range (3-8μm) of the mid-infrared spectral range. Our structures are characterized by x-ray diffraction, photoelectron spectroscopy, atomic force microscopy and transmission electron microscopy. Emission is characterized by temperature- and power-dependent infrared step-scan photoluminescence spectroscopy. The epitaxial In(Ga)Sb layers are observed to form either quantum wells, quantum dots, or disordered quantum wells, depending on the insertion layer and substrate material composition. The observed optical properties of the monolayer-scale insertions are correlated to their structural properties, as determined by transmission electron and atomic force microscopy.

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JO - Optics Express

JF - Optics Express

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ER -

Mid-infrared emission from In(Ga)Sb layers on InAs(Sb)

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