Mid-infrared surface plasmon resonance in zinc oxide semiconductor thin films

Edward Sachet; Mark D. Losego; Joshua Guske; Stefan Franzen; Jon Paul Maria

doi:10.1063/1.4791700

Mid-infrared surface plasmon resonance in zinc oxide semiconductor thin films

Edward Sachet, Mark D. Losego, Joshua Guske, Stefan Franzen, Jon Paul Maria

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

Surface plasmon resonance (SPR) in semiconducting materials at mid-infrared (mid-IR) energies offers the potential for new plasmonic functionalities and integration schemes. Mainstream semiconductors are transparent to mid-IR energies, thus a tightly integrated monolithic package for SPR sensing becomes feasible. We report mid-IR surface plasmon resonance in zinc oxide as a model material for semiconductors with 4 × 10¹⁹ to 8 × 10 ¹⁹ cm^-3 carriers. The surface plasmon modes were characterized using spectroscopic IR-ellipsometry and compared to a reflectivity simulation. The data confirm the feasibility of mid-IR SPR, show a generic ability for plasmon tuning, and demonstrate the predictive power of the reflectivity model.

Original language	English (US)
Article number	051111
Journal	Applied Physics Letters
Volume	102
Issue number	5
DOIs	https://doi.org/10.1063/1.4791700
State	Published - Feb 4 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4791700

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title = "Mid-infrared surface plasmon resonance in zinc oxide semiconductor thin films",

abstract = "Surface plasmon resonance (SPR) in semiconducting materials at mid-infrared (mid-IR) energies offers the potential for new plasmonic functionalities and integration schemes. Mainstream semiconductors are transparent to mid-IR energies, thus a tightly integrated monolithic package for SPR sensing becomes feasible. We report mid-IR surface plasmon resonance in zinc oxide as a model material for semiconductors with 4 × 1019 to 8 × 10 19 cm-3 carriers. The surface plasmon modes were characterized using spectroscopic IR-ellipsometry and compared to a reflectivity simulation. The data confirm the feasibility of mid-IR SPR, show a generic ability for plasmon tuning, and demonstrate the predictive power of the reflectivity model.",

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T1 - Mid-infrared surface plasmon resonance in zinc oxide semiconductor thin films

AU - Sachet, Edward

AU - Losego, Mark D.

AU - Guske, Joshua

AU - Franzen, Stefan

AU - Maria, Jon Paul

PY - 2013/2/4

Y1 - 2013/2/4

N2 - Surface plasmon resonance (SPR) in semiconducting materials at mid-infrared (mid-IR) energies offers the potential for new plasmonic functionalities and integration schemes. Mainstream semiconductors are transparent to mid-IR energies, thus a tightly integrated monolithic package for SPR sensing becomes feasible. We report mid-IR surface plasmon resonance in zinc oxide as a model material for semiconductors with 4 × 1019 to 8 × 10 19 cm-3 carriers. The surface plasmon modes were characterized using spectroscopic IR-ellipsometry and compared to a reflectivity simulation. The data confirm the feasibility of mid-IR SPR, show a generic ability for plasmon tuning, and demonstrate the predictive power of the reflectivity model.

AB - Surface plasmon resonance (SPR) in semiconducting materials at mid-infrared (mid-IR) energies offers the potential for new plasmonic functionalities and integration schemes. Mainstream semiconductors are transparent to mid-IR energies, thus a tightly integrated monolithic package for SPR sensing becomes feasible. We report mid-IR surface plasmon resonance in zinc oxide as a model material for semiconductors with 4 × 1019 to 8 × 10 19 cm-3 carriers. The surface plasmon modes were characterized using spectroscopic IR-ellipsometry and compared to a reflectivity simulation. The data confirm the feasibility of mid-IR SPR, show a generic ability for plasmon tuning, and demonstrate the predictive power of the reflectivity model.

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Mid-infrared surface plasmon resonance in zinc oxide semiconductor thin films

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