Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide

Angela Cleri, John Tomko, Kathleen Quiambao-Tomko, Mario V. Imperatore, Yanglin Zhu, J. Ryan Nolen, Joshua Nordlander, Joshua D. Caldwell, Zhiqiang Mao, Noel C. Giebink, Kyle P. Kelley, Evan L. Runnerstrom, Patrick E. Hopkins, Jon Paul Maria

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13 Scopus citations


Indium-doped cadmium oxide (In:CdO) thin films exhibit tunable epsilon-near-zero (ENZ) modal frequencies across a wide spectral range, bridging the mid-wave and near-infrared (IR). In:CdO thin films are prepared by reactive cosputtering from metallic Cd and In targets using high-power impulse magnetron sputtering (HiPIMS) and radio frequency sputtering, respectively. Using this approach, CdO thin films with carrier concentrations ranging from 2.3×1019 to 4.0×1020cm-3 and mobilities ranging from 300 to 400cm2/Vs are readily achieved. UV-VIS absorption spectra are used to measure optical bandgap, revealing a Burstein-Moss shift of 0.58 eV across the doping range investigated. Optical measurements demonstrate the tunability of near-perfect plasmonic ENZ absorption across the mid-wave and into the near-IR spectral ranges by controlling the carrier concentration through doping, while tuning the film thickness for impedance matching. In comparison to other dopants that can be introduced to HiPIMS-deposited CdO, In offers the largest range of carrier concentrations while maintaining high mobility, thus allowing for the widest accessibility of the IR spectrum of a single plasmonic material grown by sputtering.

Original languageEnglish (US)
Article number035202
JournalPhysical Review Materials
Issue number3
StatePublished - Mar 2021

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)


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