Minority carrier injection limited current in Re/4H-SiC Schottky diodes

K. Sarpatwari, S. E. Mohney, S. Ashok, O. O. Awadelkarim

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Current-voltage-temperature, capacitance-voltage, and Fourier transform-deep level transient spectroscopy (FT-DLTS) measurements have been employed to gain insights into the conduction mechanism in Re/4H n-silicon carbide (SiC) Schottky diodes. A power law dependence of current on voltage has been observed in the Re/4H-SiC Schottky diodes at large forward bias. DLTS studies of the diodes reveal the presence of a deep trap at an energy E c - E t - 0:6 eV. The electron trap center is tentatively associated with the prominent Z 1 defect level, and the obtained trap density and capture crosssection values correlate well with available literature values. Excess capacitance has been observed under forward bias suggesting that minority carrier injection is the mechanism responsible for the observed characteristics.

Original languageEnglish (US)
Pages (from-to)1509-1513
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number6
StatePublished - Jun 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Minority carrier injection limited current in Re/4H-SiC Schottky diodes'. Together they form a unique fingerprint.

Cite this