Mist deposited high-k dielectrics for next generation MOS gates

D. O. Lee, P. Roman, C. T. Wu, P. Mumbauer, M. Brubaker, R. Grant, J. Ruzyllo

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


This paper presents the results of the characterization of high-k dielectric films deposited by liquid source misted chemical deposition in a cluster tool for advanced MOS gates. Electrical characterization was performed in conjunction with atomic force microscopy and transmission electron microscopy. It was determined that not all compositions investigated are equally compatible with mist deposition. The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated the sequence depositing SrTa2O6 on a nitrided oxide interlayer grown by a UV/NO process showed the best promise.

Original languageEnglish (US)
Pages (from-to)1671-1677
Number of pages7
JournalSolid-State Electronics
Issue number11
StatePublished - Nov 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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