Mist deposited high-k dielectrics for next generation MOS gates

D. O. Lee; P. Roman; C. T. Wu; P. Mumbauer; M. Brubaker; R. Grant; J. Ruzyllo

doi:10.1016/S0038-1101(02)00163-6

Mist deposited high-k dielectrics for next generation MOS gates

D. O. Lee, P. Roman, C. T. Wu, P. Mumbauer, M. Brubaker, R. Grant, J. Ruzyllo

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

This paper presents the results of the characterization of high-k dielectric films deposited by liquid source misted chemical deposition in a cluster tool for advanced MOS gates. Electrical characterization was performed in conjunction with atomic force microscopy and transmission electron microscopy. It was determined that not all compositions investigated are equally compatible with mist deposition. The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated the sequence depositing SrTa₂O₆ on a nitrided oxide interlayer grown by a UV/NO process showed the best promise.

Original language	English (US)
Pages (from-to)	1671-1677
Number of pages	7
Journal	Solid-State Electronics
Volume	46
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1101(02)00163-6
State	Published - Nov 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(02)00163-6

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abstract = "This paper presents the results of the characterization of high-k dielectric films deposited by liquid source misted chemical deposition in a cluster tool for advanced MOS gates. Electrical characterization was performed in conjunction with atomic force microscopy and transmission electron microscopy. It was determined that not all compositions investigated are equally compatible with mist deposition. The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated the sequence depositing SrTa2O6 on a nitrided oxide interlayer grown by a UV/NO process showed the best promise.",

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AU - Roman, P.

AU - Wu, C. T.

AU - Mumbauer, P.

AU - Brubaker, M.

AU - Grant, R.

AU - Ruzyllo, J.

PY - 2002/11

Y1 - 2002/11

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AB - This paper presents the results of the characterization of high-k dielectric films deposited by liquid source misted chemical deposition in a cluster tool for advanced MOS gates. Electrical characterization was performed in conjunction with atomic force microscopy and transmission electron microscopy. It was determined that not all compositions investigated are equally compatible with mist deposition. The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated the sequence depositing SrTa2O6 on a nitrided oxide interlayer grown by a UV/NO process showed the best promise.

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EP - 1677

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

Mist deposited high-k dielectrics for next generation MOS gates

Abstract

All Science Journal Classification (ASJC) codes

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