Abstract
This experiment is concerned with the development of mist deposition technology as an alternative to spin-on method of photoresist deposition in microelectronic manufacturing. A commercial 200 mm mist deposition tool is used in this study. The results obtained demonstrate effectiveness of mist deposition in resist processing. Basic parameters of resist mist deposition are determined. Deposition rate can be controlled within 10 to 50 nm/min range. Using a stepper and UV-5 photoresist 250 nm patterns were readily defined in 120 nm thick mist deposited resist. It is postulated that mist deposition offers advantages over spin-on process in the case of very thin resist technology as well as in the case of resist deposition on large, non-circular substrates.
Original language | English (US) |
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Pages (from-to) | 861-866 |
Number of pages | 6 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5376 |
Issue number | PART 2 |
DOIs | |
State | Published - 2004 |
Event | Advances in Resist Technology and Processing XXI - Santa Clara, CA, United States Duration: Feb 23 2004 → Feb 24 2004 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering