Abstract
Undoped, 0.5 and 1.0 mol. Mn-doped 0.15BiInO 3-0.85PbTiO 3 films were grown on PbTiO 3/Pt/Ti/SiO 2/Si substrates by pulsed laser deposition. Phase-pure perovskite films were obtained at a substrate temperature of 585 °C irrespective of Mn doping level. The 0.5 mol. Mn-doped films showed a room temperature permittivity of 480 and a dielectric loss tangent of 0.015 at 100 kHz after 650 °C post-deposition annealing. The coercive field and remanent polarization were 80 kV/cm and 29 C/cm 2, respectively. The ferroelectric transition temperature of the films ranged from 535 to 585 °C. The e 31,f piezoelectric coefficient was -7.1 μC/m 2. X-ray diffraction and phase transition temperature data showed that the Mn atoms substitute on the Ti-site as Mn 3; the resulting films have p-type conduction characteristics.
Original language | English (US) |
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Article number | 212905 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 21 |
DOIs | |
State | Published - May 21 2012 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)