MOCVD-grown AlGaN buffer GaN HEMTs with V-Gates for microwave power applications

Rongming Chu, Zhen Chen, Yi Pei, Scott Newman, Steven P. DenBaars, Umesh K. Mishra

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


We report the performance of AlGaN buffer GaN high-electron mobility transistors (HEMTs) grown by metal-organic chemical vapor deposition. GaN HEMTs on high-quality AlGaN buffer were grown on SiC substrates. The incorporation of an AlGaN buffer into the GaN HEMT significantly improves channel confinement and suppresses the short-channel effect. Advanced deep-recess V-gate structures were employed to optimize the device for better microwave power performance. With a 10-nm GaN channel layer sandwiched between the AlGaN barrier and buffer, excellent power performance was achieved. The output power density is 13.1 W/mm, and the associated power-added efficiency is 72% at 4-GHz frequency and 48-V drain bias. This power performance is comparable to the state-of-the-art GaN HEMTs grown on GaN buffers, indicating that the AlGaN buffer in our optimized device structure does not introduce any noticeable trapping.

Original languageEnglish (US)
Pages (from-to)910-912
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'MOCVD-grown AlGaN buffer GaN HEMTs with V-Gates for microwave power applications'. Together they form a unique fingerprint.

Cite this