Engineering
Metal Organic Chemical Vapor Deposition
100%
Power Density
100%
Output Power
100%
Drain Bias
100%
Device Structure
100%
Channel Layer
100%
Power Added Efficiency
100%
Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Microwave Energy
100%
GaN HEMT
100%
Power Applications
100%
GaN Buffer
100%
Power Performance
42%
Short Channel Effects
14%
GHz Frequency
14%
Device Structure
14%
SiC Substrate
14%
Output Power Density
14%
Drain Bias
14%
Gate Structure
14%
AlGaN Barrier
14%
Deep Recess
14%
Channel Layer
14%
Power Added Efficiency
14%
Material Science
Transistor
100%
Electron Mobility
100%
Density
20%
Metal-Organic Chemical Vapor Deposition
20%
Earth and Planetary Sciences
High Electron Mobility Transistors
100%
State of the Art
20%
Metalorganic Chemical Vapor Deposition
20%