TY - JOUR
T1 - MOCVD Growth of Tungsten Ditelluride Thin Films
AU - Mc Knight, Thomas V.
AU - Choudhury, Tanushree H.
AU - Wang, Ke
AU - Bansal, Anushka
AU - Redwing, Joan M.
N1 - Publisher Copyright:
© 2023 Elsevier B.V.
PY - 2024/1/1
Y1 - 2024/1/1
N2 - The growth of tungsten ditelluride (WTe2) thin films on c-plane sapphire substrates was demonstrated by metalorganic chemical vapor deposition (MOCVD) using tungsten hexacarbonyl (W(CO)6) and diethyltelluride (DETe) as precursors for W and Te, respectively, in a H2 carrier gas. The effects of substrate temperature, reactor pressure, precursor and carrier gas flow rates, and chalcogen-to-metal ratio on the WTe2 growth rate and film properties were determined. Substrate temperatures less than 500 °C were required to deposit WTe2 which was found to be beneficial to suppress simultaneous carbon deposition from the DETe precursor. The films exhibited a fine-grained morphology independent of growth temperature. The layered crystalline 1 T’ phase of WTe2 was confirmed using high resolution X-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (TEM) which revealed that the films were predominantly c-axis oriented with in-plane twist. X-ray photoelectron spectroscopy (XPS) demonstrated that the WTe2 films were stable in air for a few days but eventually exhibited oxidation.
AB - The growth of tungsten ditelluride (WTe2) thin films on c-plane sapphire substrates was demonstrated by metalorganic chemical vapor deposition (MOCVD) using tungsten hexacarbonyl (W(CO)6) and diethyltelluride (DETe) as precursors for W and Te, respectively, in a H2 carrier gas. The effects of substrate temperature, reactor pressure, precursor and carrier gas flow rates, and chalcogen-to-metal ratio on the WTe2 growth rate and film properties were determined. Substrate temperatures less than 500 °C were required to deposit WTe2 which was found to be beneficial to suppress simultaneous carbon deposition from the DETe precursor. The films exhibited a fine-grained morphology independent of growth temperature. The layered crystalline 1 T’ phase of WTe2 was confirmed using high resolution X-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (TEM) which revealed that the films were predominantly c-axis oriented with in-plane twist. X-ray photoelectron spectroscopy (XPS) demonstrated that the WTe2 films were stable in air for a few days but eventually exhibited oxidation.
UR - http://www.scopus.com/inward/record.url?scp=85173606786&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85173606786&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2023.127436
DO - 10.1016/j.jcrysgro.2023.127436
M3 - Article
AN - SCOPUS:85173606786
SN - 0022-0248
VL - 625
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 127436
ER -