TY - GEN
T1 - Model for channel hot carrier reliability degradation due to plasma damage in MOS devices
AU - Rangan, Sanjay
AU - Krishnan, Srikanth
AU - Amerasekara, Ajith
AU - Aur, Shian
AU - Ashok, S.
PY - 1999
Y1 - 1999
N2 - An empirical relation between device channel hot carrier lifetime and process induced damage has been developed, by correlating the antenna ratio (AR) to the channel hot carrier lifetime (τ) of both N- and P-MOSFET's. A 10X increase in AR results in a 7X fall in its normalized lifetime for NMOS and a 10X fall for the PMOS. A process constant P and a device constant D have been introduced. Process-related factors such as reactor design and process conditions are accounted for by P, while D includes the device features, such as gate-drain overlap and dielectric technology.
AB - An empirical relation between device channel hot carrier lifetime and process induced damage has been developed, by correlating the antenna ratio (AR) to the channel hot carrier lifetime (τ) of both N- and P-MOSFET's. A 10X increase in AR results in a 7X fall in its normalized lifetime for NMOS and a 10X fall for the PMOS. A process constant P and a device constant D have been introduced. Process-related factors such as reactor design and process conditions are accounted for by P, while D includes the device features, such as gate-drain overlap and dielectric technology.
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M3 - Conference contribution
AN - SCOPUS:0032639184
SN - 0780352203
T3 - Annual Proceedings - Reliability Physics (Symposium)
SP - 370
EP - 374
BT - Annual Proceedings - Reliability Physics (Symposium)
PB - IEEE
T2 - Proceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
Y2 - 23 March 1999 through 25 March 1999
ER -