Model for the Bipolar Amplification Effect

James P. Ashton, Stephen J. Moxim, Ashton D. Purcell, Patrick M. Lenahan, Jason T. Ryan

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We present a model based on Fitzgerald-Grove surface recombination for the bipolar amplification effect (BAE) measurement, which is widely utilized in electrically detected magnetic resonance (EDMR) to measure reliability and performance-limiting interface defect structure in metal-oxide-semiconductor field-effect transistors (MOSFETs). This proof-of-concept work illustrates that quantitative BAE measurements can be made to determine interface defect densities and allows for predictions of optimal EDMR BAE biasing. Furthermore, this work also provides an initial step forward for a theory based on spin-dependent recombination measurements utilizing BAE EDMR.

Original languageEnglish (US)
Title of host publication2021 IEEE International Integrated Reliability Workshop, IIRW 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665417945
StatePublished - 2021
Event2021 IEEE International Integrated Reliability Workshop, IIRW 2021 - Virtual, South Lake Tahoe, United States
Duration: Oct 4 2021Oct 28 2021

Publication series

NameIEEE International Integrated Reliability Workshop Final Report


Conference2021 IEEE International Integrated Reliability Workshop, IIRW 2021
Country/TerritoryUnited States
CityVirtual, South Lake Tahoe

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials


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