@inproceedings{9f04c67482c4475f86da06d0a8e27bfd,
title = "Model for the Bipolar Amplification Effect",
abstract = "We present a model based on Fitzgerald-Grove surface recombination for the bipolar amplification effect (BAE) measurement, which is widely utilized in electrically detected magnetic resonance (EDMR) to measure reliability and performance-limiting interface defect structure in metal-oxide-semiconductor field-effect transistors (MOSFETs). This proof-of-concept work illustrates that quantitative BAE measurements can be made to determine interface defect densities and allows for predictions of optimal EDMR BAE biasing. Furthermore, this work also provides an initial step forward for a theory based on spin-dependent recombination measurements utilizing BAE EDMR. ",
author = "Ashton, {James P.} and Moxim, {Stephen J.} and Purcell, {Ashton D.} and Lenahan, {Patrick M.} and Ryan, {Jason T.}",
note = "Funding Information: This project was sponsored by the Department of Defense, Defense Threat Reduction Agency under grant number HDTRA1-18-0012. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Integrated Reliability Workshop, IIRW 2021 ; Conference date: 04-10-2021 Through 28-10-2021",
year = "2021",
doi = "10.1109/IIRW53245.2021.9635616",
language = "English (US)",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Integrated Reliability Workshop, IIRW 2021",
address = "United States",
}