Modeling and analysis of SSN in silicon and glass interposers for 3D systems

Biancun Xie; Madhavan Swaminathan

doi:10.1109/EPEPS.2012.6457893

Modeling and analysis of SSN in silicon and glass interposers for 3D systems

Biancun Xie, Madhavan Swaminathan

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

In this paper, an efficient hybrid modeling approach for power delivery network (PDN) with through-silicon vias (TSVs) for 3D systems is proposed. The proposed approach extends multi-layer finite difference method (M-FDM) to include TSVs by extracting their parasitic behavior using an integral equation based solver. Using the proposed modeling technique the power/signal integrity of PDN with TSVs/through-glass vias (TGVs) in lossy silicon interposer and low loss glass interposer is investigated and compared. The comparison indicates the benefits of using silicon interposer for high speed signaling.

Original language	English (US)
Title of host publication	2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012
Pages	268-271
Number of pages	4
DOIs	https://doi.org/10.1109/EPEPS.2012.6457893
State	Published - 2012
Event	2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012 - Tempe, AZ, United States Duration: Oct 21 2012 → Oct 24 2012

Publication series

Name	2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012

Conference

Conference	2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012
Country/Territory	United States
City	Tempe, AZ
Period	10/21/12 → 10/24/12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/EPEPS.2012.6457893

Cite this

Xie, B., & Swaminathan, M. (2012). Modeling and analysis of SSN in silicon and glass interposers for 3D systems. In 2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012 (pp. 268-271). Article 6457893 (2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012). https://doi.org/10.1109/EPEPS.2012.6457893

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title = "Modeling and analysis of SSN in silicon and glass interposers for 3D systems",

abstract = "In this paper, an efficient hybrid modeling approach for power delivery network (PDN) with through-silicon vias (TSVs) for 3D systems is proposed. The proposed approach extends multi-layer finite difference method (M-FDM) to include TSVs by extracting their parasitic behavior using an integral equation based solver. Using the proposed modeling technique the power/signal integrity of PDN with TSVs/through-glass vias (TGVs) in lossy silicon interposer and low loss glass interposer is investigated and compared. The comparison indicates the benefits of using silicon interposer for high speed signaling.",

author = "Biancun Xie and Madhavan Swaminathan",

year = "2012",

doi = "10.1109/EPEPS.2012.6457893",

language = "English (US)",

isbn = "9781467325394",

series = "2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012",

pages = "268--271",

booktitle = "2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012",

note = "2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012 ; Conference date: 21-10-2012 Through 24-10-2012",

}

Xie, B & Swaminathan, M 2012, Modeling and analysis of SSN in silicon and glass interposers for 3D systems. in 2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012., 6457893, 2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012, pp. 268-271, 2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012, Tempe, AZ, United States, 10/21/12. https://doi.org/10.1109/EPEPS.2012.6457893

Modeling and analysis of SSN in silicon and glass interposers for 3D systems. / Xie, Biancun; Swaminathan, Madhavan.
2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012. 2012. p. 268-271 6457893 (2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - In this paper, an efficient hybrid modeling approach for power delivery network (PDN) with through-silicon vias (TSVs) for 3D systems is proposed. The proposed approach extends multi-layer finite difference method (M-FDM) to include TSVs by extracting their parasitic behavior using an integral equation based solver. Using the proposed modeling technique the power/signal integrity of PDN with TSVs/through-glass vias (TGVs) in lossy silicon interposer and low loss glass interposer is investigated and compared. The comparison indicates the benefits of using silicon interposer for high speed signaling.

AB - In this paper, an efficient hybrid modeling approach for power delivery network (PDN) with through-silicon vias (TSVs) for 3D systems is proposed. The proposed approach extends multi-layer finite difference method (M-FDM) to include TSVs by extracting their parasitic behavior using an integral equation based solver. Using the proposed modeling technique the power/signal integrity of PDN with TSVs/through-glass vias (TGVs) in lossy silicon interposer and low loss glass interposer is investigated and compared. The comparison indicates the benefits of using silicon interposer for high speed signaling.

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M3 - Conference contribution

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BT - 2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012

T2 - 2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012

Y2 - 21 October 2012 through 24 October 2012

ER -

Modeling and analysis of SSN in silicon and glass interposers for 3D systems

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