Modeling and characterization of a 300 V GaN based boost converter with 96% efficiency at 1 MHz

Presented here is experimental and simulated demonstration of a 96% efficient GaN based synchronous boost converter switching at 1 MHz. First, experimental implementation of the GaN based boost converter with 96% efficiency is established. A behavioral model of the GaN transistor is then developed in Saber, by reproducing five experimentally measured DC characteristics. The GaN device model is subsequently implemented in the same synchronous boost converter topology as in experimentation. It will be shown that the simulated converter topology, which consists of the GaN device models, is also capable of delivering power at an efficiency of at least 96%. Thus, the validated device model presented here will be utilized in the future to project the performance of the GaN transistors in larger more complex power conversion circuits, such as those often implemented in automotive and renewable energy applications.