TY - JOUR
T1 - Modeling and characterization of atomically sharp "perfect" Ge/SiC2 interfaces
AU - Windl, Wolfgang
AU - Liang, Tao
AU - Lopatin, Sergei
AU - Duscher, Gerd
N1 - Funding Information:
This work was funded by the Semiconductor Research Corporation under contract number 2002-MJ-1018, the National Science Foundation under contract number 0244724, and the U.S. Department of Energy under contract number DE-AC05-00OR22725. We also thank the Ohio Supercomputer Center for supercomputer time under project number PAS0072.
PY - 2004/12/15
Y1 - 2004/12/15
N2 - We have shown that oxidation of germanium-implanted Si can produce a pile-up of Ge in front of the oxidation front and produce an atomically-sharp interface. In this paper, we examine band-structure and processing of such an interface. Based on ab-initio calculations, the band structure of the sharp interface seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiC2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys. The model explains the formation of the sharp interface due to the repulsive interaction between O and Ge. Furthermore, inclusion of Ge into the oxide is predicted for higher Ge concentrations, in agreement with experiment.
AB - We have shown that oxidation of germanium-implanted Si can produce a pile-up of Ge in front of the oxidation front and produce an atomically-sharp interface. In this paper, we examine band-structure and processing of such an interface. Based on ab-initio calculations, the band structure of the sharp interface seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiC2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys. The model explains the formation of the sharp interface due to the repulsive interaction between O and Ge. Furthermore, inclusion of Ge into the oxide is predicted for higher Ge concentrations, in agreement with experiment.
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U2 - 10.1016/j.mseb.2004.07.041
DO - 10.1016/j.mseb.2004.07.041
M3 - Article
AN - SCOPUS:10644292532
SN - 0921-5107
VL - 114-115
SP - 156
EP - 161
JO - Materials Science and Engineering: B
JF - Materials Science and Engineering: B
IS - SPEC. ISS.
ER -