TY - GEN
T1 - Modeling and comparative analysis of hysteretic ferroelectric and anti-ferroelectric FETs
AU - Saha, Atanu K.
AU - Gupta, Sumeet K.
N1 - Publisher Copyright:
© 2018 IEEE.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/8/20
Y1 - 2018/8/20
N2 - In this paper, we analyze ferroelectric (FE) and anti-ferroelectric (AFE) field effect transistors (FETs) (shown in Fig. 1(a)) and compare their subthreshold characteristics and hysteretic behavior. To facilitate this analysis, we develop a Preisach based [1] circuit compatible model for FE/AFE. Whereas in FE capacitor the two stable polarization (P) states are -PR and +PR, in case of AFE capacitor, non-volatility can be achieved within →+PR by imposing a built-in potential through work-function engineering (Fig, 1(b)). However, in FE/APEFETs, FE/AFE can be partially polarized (forming minor P-Vloop), which we analyze in this paper. Finally, correlating the negative capacitance (NC) effect in FE/AFE with domain-wall propagation [2], we explore the steep subthreshold swing (SS) characteristics of FE/APE-FET and analyze their transient nature and dependence on flat-band voltage (VFB) and maximum applied gate voltage (VGS).
AB - In this paper, we analyze ferroelectric (FE) and anti-ferroelectric (AFE) field effect transistors (FETs) (shown in Fig. 1(a)) and compare their subthreshold characteristics and hysteretic behavior. To facilitate this analysis, we develop a Preisach based [1] circuit compatible model for FE/AFE. Whereas in FE capacitor the two stable polarization (P) states are -PR and +PR, in case of AFE capacitor, non-volatility can be achieved within →+PR by imposing a built-in potential through work-function engineering (Fig, 1(b)). However, in FE/APEFETs, FE/AFE can be partially polarized (forming minor P-Vloop), which we analyze in this paper. Finally, correlating the negative capacitance (NC) effect in FE/AFE with domain-wall propagation [2], we explore the steep subthreshold swing (SS) characteristics of FE/APE-FET and analyze their transient nature and dependence on flat-band voltage (VFB) and maximum applied gate voltage (VGS).
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U2 - 10.1109/DRC.2018.8442136
DO - 10.1109/DRC.2018.8442136
M3 - Conference contribution
AN - SCOPUS:85053210494
SN - 9781538630280
T3 - Device Research Conference - Conference Digest, DRC
BT - 2018 76th Device Research Conference, DRC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 76th Device Research Conference, DRC 2018
Y2 - 24 June 2018 through 27 June 2018
ER -