Modeling hysteresis phenomena in nanotube field-effect transistors

Arnaud Robert-Peillard; Slava V. Rotkin

doi:10.1109/TNANO.2004.842053

Modeling hysteresis phenomena in nanotube field-effect transistors

Arnaud Robert-Peillard, Slava V. Rotkin

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

A model is developed to explain a hysteresis observed experimentally in nanotube field-effect transistors. The model explains the hysteresis through trapping of electrons in an oxide layer. The Fowler-Nordheim tunneling mechanism is held responsible for the electron injection. The influence of different parameters such as the sweeping rate or the range of the gate voltage on the hysteresis is studied and compared with experimental results.

Original language	English (US)
Pages (from-to)	284-288
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	4
Issue number	2
DOIs	https://doi.org/10.1109/TNANO.2004.842053
State	Published - Mar 2005

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/TNANO.2004.842053

Cite this

@article{b1dec0b345c14b849b516c7a8f2f7f53,

title = "Modeling hysteresis phenomena in nanotube field-effect transistors",

abstract = "A model is developed to explain a hysteresis observed experimentally in nanotube field-effect transistors. The model explains the hysteresis through trapping of electrons in an oxide layer. The Fowler-Nordheim tunneling mechanism is held responsible for the electron injection. The influence of different parameters such as the sweeping rate or the range of the gate voltage on the hysteresis is studied and compared with experimental results.",

author = "Arnaud Robert-Peillard and Rotkin, {Slava V.}",

note = "Funding Information: Manuscript received June 8, 2004; revised October 13, 2004. This work was supported by the Office of Naval Research under Grant NO0014-98-1-0604, by the Army Research Office under Grant DAAG55-09-1-0306, and by the National Science Foundation under Grant EEC-0228390. The work of S. V. Rotkin was supported by the Department of Energy under Grant DE-FG02-01ER45932 and by the National Science Foundation under Grant ECS 04-03489.",

year = "2005",

month = mar,

doi = "10.1109/TNANO.2004.842053",

language = "English (US)",

volume = "4",

pages = "284--288",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Modeling hysteresis phenomena in nanotube field-effect transistors

AU - Robert-Peillard, Arnaud

AU - Rotkin, Slava V.

N1 - Funding Information: Manuscript received June 8, 2004; revised October 13, 2004. This work was supported by the Office of Naval Research under Grant NO0014-98-1-0604, by the Army Research Office under Grant DAAG55-09-1-0306, and by the National Science Foundation under Grant EEC-0228390. The work of S. V. Rotkin was supported by the Department of Energy under Grant DE-FG02-01ER45932 and by the National Science Foundation under Grant ECS 04-03489.

PY - 2005/3

Y1 - 2005/3

N2 - A model is developed to explain a hysteresis observed experimentally in nanotube field-effect transistors. The model explains the hysteresis through trapping of electrons in an oxide layer. The Fowler-Nordheim tunneling mechanism is held responsible for the electron injection. The influence of different parameters such as the sweeping rate or the range of the gate voltage on the hysteresis is studied and compared with experimental results.

AB - A model is developed to explain a hysteresis observed experimentally in nanotube field-effect transistors. The model explains the hysteresis through trapping of electrons in an oxide layer. The Fowler-Nordheim tunneling mechanism is held responsible for the electron injection. The influence of different parameters such as the sweeping rate or the range of the gate voltage on the hysteresis is studied and compared with experimental results.

UR - http://www.scopus.com/inward/record.url?scp=15844399392&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15844399392&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2004.842053

DO - 10.1109/TNANO.2004.842053

M3 - Article

AN - SCOPUS:15844399392

SN - 1536-125X

VL - 4

SP - 284

EP - 288

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 2

ER -

Modeling hysteresis phenomena in nanotube field-effect transistors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this