Modeling of in-plane distortions due to variations in absorber stress

M. Laudon; R. Engelstad; K. Thole; W. Dauksher; D. Resnick; K. Cummings; P. Seese; W. Johnson

doi:10.1016/0167-9317(95)00233-2

Modeling of in-plane distortions due to variations in absorber stress

M. Laudon, R. Engelstad, K. Thole, W. Dauksher, D. Resnick, K. Cummings, P. Seese, W. Johnson

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The effort to achieve sub-0.25 μm X-ray lithography depends, in part, on the ability to maintain strict fabrication control leading to low distortion X-ray masks. This paper presents finite element (FE) models developed to identify sources of pattern in-plane distortions (IPD) during mask fabrication. In particular, mask fabrication processes inducing both uniform and non-uniform absorber stresses and the resulting distortions due pattern transferring through these stressed layers have been investigated.

Original language	English (US)
Pages (from-to)	227-230
Number of pages	4
Journal	Microelectronic Engineering
Volume	30
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(95)00233-2
State	Published - Jan 1996

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(95)00233-2

Cite this

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title = "Modeling of in-plane distortions due to variations in absorber stress",

abstract = "The effort to achieve sub-0.25 μm X-ray lithography depends, in part, on the ability to maintain strict fabrication control leading to low distortion X-ray masks. This paper presents finite element (FE) models developed to identify sources of pattern in-plane distortions (IPD) during mask fabrication. In particular, mask fabrication processes inducing both uniform and non-uniform absorber stresses and the resulting distortions due pattern transferring through these stressed layers have been investigated.",

author = "M. Laudon and R. Engelstad and K. Thole and W. Dauksher and D. Resnick and K. Cummings and P. Seese and W. Johnson",

note = "Funding Information: This research has been supported in part by the PXLA, SRC/SEMATECH, and ARPA/NRL through the Center for X-ray Lithography at the University of Wisconsin-Madison. Additional support has been provided by the National Science Foundation and the University of Wisconsin Graduate School.",

year = "1996",

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doi = "10.1016/0167-9317(95)00233-2",

language = "English (US)",

volume = "30",

pages = "227--230",

journal = "Microelectronic Engineering",

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TY - JOUR

T1 - Modeling of in-plane distortions due to variations in absorber stress

AU - Laudon, M.

AU - Engelstad, R.

AU - Thole, K.

AU - Dauksher, W.

AU - Resnick, D.

AU - Cummings, K.

AU - Seese, P.

AU - Johnson, W.

N1 - Funding Information: This research has been supported in part by the PXLA, SRC/SEMATECH, and ARPA/NRL through the Center for X-ray Lithography at the University of Wisconsin-Madison. Additional support has been provided by the National Science Foundation and the University of Wisconsin Graduate School.

PY - 1996/1

Y1 - 1996/1

N2 - The effort to achieve sub-0.25 μm X-ray lithography depends, in part, on the ability to maintain strict fabrication control leading to low distortion X-ray masks. This paper presents finite element (FE) models developed to identify sources of pattern in-plane distortions (IPD) during mask fabrication. In particular, mask fabrication processes inducing both uniform and non-uniform absorber stresses and the resulting distortions due pattern transferring through these stressed layers have been investigated.

AB - The effort to achieve sub-0.25 μm X-ray lithography depends, in part, on the ability to maintain strict fabrication control leading to low distortion X-ray masks. This paper presents finite element (FE) models developed to identify sources of pattern in-plane distortions (IPD) during mask fabrication. In particular, mask fabrication processes inducing both uniform and non-uniform absorber stresses and the resulting distortions due pattern transferring through these stressed layers have been investigated.

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VL - 30

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EP - 230

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Modeling of in-plane distortions due to variations in absorber stress

Abstract

All Science Journal Classification (ASJC) codes

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