Modeling of retention characteristics for metal and semiconductor nanocrystal memories

Weihua Guan; Shibing Long; Ming Liu; Qi Liu; Yuan Hu; Zhigang Li; Rui Jia

doi:10.1016/j.sse.2007.03.017

Modeling of retention characteristics for metal and semiconductor nanocrystal memories

Weihua Guan, Shibing Long, Ming Liu, Qi Liu, Yuan Hu, Zhigang Li, Rui Jia

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNC) memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement with experimental data, which confirms the validity of this model. The impact of the nanocrystal size, tunneling dielectric materials (especially high-κ dielectrics), and tunneling dielectric thickness on the retention characteristics are all investigated for both the metal nanocrystals and the semiconductor nanocrystals.

Original language	English (US)
Pages (from-to)	806-811
Number of pages	6
Journal	Solid-State Electronics
Volume	51
Issue number	5
DOIs	https://doi.org/10.1016/j.sse.2007.03.017
State	Published - May 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2007.03.017

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title = "Modeling of retention characteristics for metal and semiconductor nanocrystal memories",

abstract = "The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNC) memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement with experimental data, which confirms the validity of this model. The impact of the nanocrystal size, tunneling dielectric materials (especially high-κ dielectrics), and tunneling dielectric thickness on the retention characteristics are all investigated for both the metal nanocrystals and the semiconductor nanocrystals.",

author = "Weihua Guan and Shibing Long and Ming Liu and Qi Liu and Yuan Hu and Zhigang Li and Rui Jia",

year = "2007",

month = may,

doi = "10.1016/j.sse.2007.03.017",

language = "English (US)",

volume = "51",

pages = "806--811",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Modeling of retention characteristics for metal and semiconductor nanocrystal memories

AU - Guan, Weihua

AU - Long, Shibing

AU - Liu, Ming

AU - Liu, Qi

AU - Hu, Yuan

AU - Li, Zhigang

AU - Jia, Rui

PY - 2007/5

Y1 - 2007/5

N2 - The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNC) memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement with experimental data, which confirms the validity of this model. The impact of the nanocrystal size, tunneling dielectric materials (especially high-κ dielectrics), and tunneling dielectric thickness on the retention characteristics are all investigated for both the metal nanocrystals and the semiconductor nanocrystals.

AB - The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNC) memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement with experimental data, which confirms the validity of this model. The impact of the nanocrystal size, tunneling dielectric materials (especially high-κ dielectrics), and tunneling dielectric thickness on the retention characteristics are all investigated for both the metal nanocrystals and the semiconductor nanocrystals.

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VL - 51

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EP - 811

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

ER -

Modeling of retention characteristics for metal and semiconductor nanocrystal memories

Abstract

All Science Journal Classification (ASJC) codes

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