Abstract
A model for the growth of gallium nitride in a vertical metalorganic vapor phase epitaxy reactor is presented. For a mixture of non-dilute gases, the flow temperature and concentration profiles are predicted. The results show that the growth of GaN epilayers is through an intermediate adduct of TMG and ammonia. Growth rates are predicted based on simple reaction mechanisms and compared with those obtained experimentally. Loss of adduct species due to polymerization leads to lowering in growth rate. An attempt to quantify loss of reacting species is made based on experimentally observed growth rates.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 255-260 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 395 |
| State | Published - 1996 |
| Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- General Materials Science