Modeling the back gate effects of AlGaN/GaN HEMTs

Li Wang; Xuefeng Zhang; Guanjun You; Feng Xiong; Lixin Liang; Yong Hu; Aping Chen; Jie Liu; Jian Xu

doi:10.1007/s10825-014-0603-y

Modeling the back gate effects of AlGaN/GaN HEMTs

Li Wang, Xuefeng Zhang, Guanjun You, Feng Xiong, Lixin Liang, Yong Hu, Aping Chen, Jie Liu, Jian Xu

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This letter reports the design and simulation of novel AlGaN/GaN double-gate high electron mobility transistors (DG HEMTs) featuring enhanced back gate-control of the two dimensional electron gas in AlGaN/GaN heterostructures. A comparison study was carried out to reveal the difference between the performance of the AlGaN/GaN DG HEMTs and single-gate devices. The results show that the DG GaN-HEMTs can potentially offer a higher transconductance gain and better immunity of the short channel effects of drain induced barrier lowering and subthreshold swing than traditional single-gate HEMTs.

Original language	English (US)
Pages (from-to)	872-876
Number of pages	5
Journal	Journal of Computational Electronics
Volume	13
Issue number	4
DOIs	https://doi.org/10.1007/s10825-014-0603-y
State	Published - Dec 1 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

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10.1007/s10825-014-0603-y

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title = "Modeling the back gate effects of AlGaN/GaN HEMTs",

abstract = "This letter reports the design and simulation of novel AlGaN/GaN double-gate high electron mobility transistors (DG HEMTs) featuring enhanced back gate-control of the two dimensional electron gas in AlGaN/GaN heterostructures. A comparison study was carried out to reveal the difference between the performance of the AlGaN/GaN DG HEMTs and single-gate devices. The results show that the DG GaN-HEMTs can potentially offer a higher transconductance gain and better immunity of the short channel effects of drain induced barrier lowering and subthreshold swing than traditional single-gate HEMTs.",

author = "Li Wang and Xuefeng Zhang and Guanjun You and Feng Xiong and Lixin Liang and Yong Hu and Aping Chen and Jie Liu and Jian Xu",

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TY - JOUR

T1 - Modeling the back gate effects of AlGaN/GaN HEMTs

AU - Wang, Li

AU - Zhang, Xuefeng

AU - You, Guanjun

AU - Xiong, Feng

AU - Liang, Lixin

AU - Hu, Yong

AU - Chen, Aping

AU - Liu, Jie

AU - Xu, Jian

PY - 2014/12/1

Y1 - 2014/12/1

N2 - This letter reports the design and simulation of novel AlGaN/GaN double-gate high electron mobility transistors (DG HEMTs) featuring enhanced back gate-control of the two dimensional electron gas in AlGaN/GaN heterostructures. A comparison study was carried out to reveal the difference between the performance of the AlGaN/GaN DG HEMTs and single-gate devices. The results show that the DG GaN-HEMTs can potentially offer a higher transconductance gain and better immunity of the short channel effects of drain induced barrier lowering and subthreshold swing than traditional single-gate HEMTs.

AB - This letter reports the design and simulation of novel AlGaN/GaN double-gate high electron mobility transistors (DG HEMTs) featuring enhanced back gate-control of the two dimensional electron gas in AlGaN/GaN heterostructures. A comparison study was carried out to reveal the difference between the performance of the AlGaN/GaN DG HEMTs and single-gate devices. The results show that the DG GaN-HEMTs can potentially offer a higher transconductance gain and better immunity of the short channel effects of drain induced barrier lowering and subthreshold swing than traditional single-gate HEMTs.

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JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

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ER -

Modeling the back gate effects of AlGaN/GaN HEMTs

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