Modelling hysteresis in vanadium dioxide oscillators

P. Maffezzoni; L. Daniel; N. Shukla; S. Datta; A. Raychowdhury; V. Narayanan

doi:10.1049/el.2015.0025

Modelling hysteresis in vanadium dioxide oscillators

P. Maffezzoni
, L. Daniel
, N. Shukla
, S. Datta
, A. Raychowdhury
, V. Narayanan

Computer Science and Engineering

Research output: Contribution to journal › Short survey › peer-review

3 Scopus citations

Abstract

An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations.

Original language	English (US)
Pages (from-to)	819-820
Number of pages	2
Journal	Electronics Letters
Volume	51
Issue number	11
DOIs	https://doi.org/10.1049/el.2015.0025
State	Published - May 28 2015

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el.2015.0025

Cite this

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title = "Modelling hysteresis in vanadium dioxide oscillators",

abstract = "An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations.",

author = "P. Maffezzoni and L. Daniel and N. Shukla and S. Datta and A. Raychowdhury and V. Narayanan",

note = "Publisher Copyright: {\textcopyright} 2015 The Institution of Engineering and Technology.",

year = "2015",

month = may,

day = "28",

doi = "10.1049/el.2015.0025",

language = "English (US)",

volume = "51",

pages = "819--820",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

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TY - JOUR

T1 - Modelling hysteresis in vanadium dioxide oscillators

AU - Maffezzoni, P.

AU - Daniel, L.

AU - Shukla, N.

AU - Datta, S.

AU - Raychowdhury, A.

AU - Narayanan, V.

PY - 2015/5/28

Y1 - 2015/5/28

N2 - An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations.

AB - An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations.

UR - https://www.scopus.com/pages/publications/84929650538

UR - https://www.scopus.com/pages/publications/84929650538#tab=citedBy

U2 - 10.1049/el.2015.0025

DO - 10.1049/el.2015.0025

M3 - Short survey

AN - SCOPUS:84929650538

SN - 0013-5194

VL - 51

SP - 819

EP - 820

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Modelling hysteresis in vanadium dioxide oscillators

Abstract

All Science Journal Classification (ASJC) codes

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