TY - JOUR
T1 - Modelling of the vertical deflection of ferroelectric bending tongues loaded at their free end
AU - Cardoletti, Juliette
AU - Radetinac, Aldin
AU - Thiem, Daniel
AU - Walker, Julian
AU - Komissinskiy, Philipp
AU - Xu, Bai Xiang
AU - Schlaak, Helmut
AU - Trolier-Mckinstry, Susan
AU - Alff, Lambert
N1 - Publisher Copyright:
© 2019 Author(s).
PY - 2019/2/1
Y1 - 2019/2/1
N2 - In this work, a model to describe the vertical deflection of ferroelectric bending tongues with a load at their free end is proposed. The model is based on the ferroelectric switching criterion developed by Hwang et al. ["Ferroelectric/ferroelastic interactions and a polarization switching model," Acta Metall. Mater. 43, 2073-2084 (1995)] and the Euler-Bernoulli beam theory. It notably takes into account the geometry of the bending tongue, the mechanical and piezoelectric material properties, the applied electrical field, the crystallographic state of the ferroelectric thin film and its built-in strain. Hwang's model is improved by incorporating strain saturation at high field, as expected for the butterfly loop. This allows accurate estimates of the vertical deflection for ferroelectric bending tongue based applications.
AB - In this work, a model to describe the vertical deflection of ferroelectric bending tongues with a load at their free end is proposed. The model is based on the ferroelectric switching criterion developed by Hwang et al. ["Ferroelectric/ferroelastic interactions and a polarization switching model," Acta Metall. Mater. 43, 2073-2084 (1995)] and the Euler-Bernoulli beam theory. It notably takes into account the geometry of the bending tongue, the mechanical and piezoelectric material properties, the applied electrical field, the crystallographic state of the ferroelectric thin film and its built-in strain. Hwang's model is improved by incorporating strain saturation at high field, as expected for the butterfly loop. This allows accurate estimates of the vertical deflection for ferroelectric bending tongue based applications.
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U2 - 10.1063/1.5082392
DO - 10.1063/1.5082392
M3 - Article
AN - SCOPUS:85061663533
SN - 2158-3226
VL - 9
JO - AIP Advances
JF - AIP Advances
IS - 2
M1 - 025017
ER -