Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions

S. R. Shinde; S. B. Ogale; J. Higgins; R. J. Choudhary; V. N. Kulkarni; T. Venkatesan; H. Zheng; R. Ramesh; A. V. Pogrebnyakov; S. Y. Xu; Qi Li; X. X. Xi; J. M. Redwing; D. Kanjilal

doi:10.1063/1.1687982

Modification of critical current density of MgB ₂ films irradiated with 200 MeV Ag ions

S. R. Shinde, S. B. Ogale, J. Higgins, R. J. Choudhary, V. N. Kulkarni, T. Venkatesan, H. Zheng, R. Ramesh, A. V. Pogrebnyakov, S. Y. Xu, Qi Li, X. X. Xi, J. M. Redwing, D. Kanjilal

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Abstract

The modification in the temperature and field dependence of critical current density of high quality MgB ₂ thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB ₂ films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J _C.

Original language	English (US)
Pages (from-to)	2352-2354
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	13
DOIs	https://doi.org/10.1063/1.1687982
State	Published - Mar 29 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1687982

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Shinde, S. R., Ogale, S. B., Higgins, J., Choudhary, R. J., Kulkarni, V. N., Venkatesan, T., Zheng, H., Ramesh, R., Pogrebnyakov, A. V., Xu, S. Y., Li, Q., Xi, X. X., Redwing, J. M., & Kanjilal, D. (2004). Modification of critical current density of MgB ₂ films irradiated with 200 MeV Ag ions. Applied Physics Letters, 84(13), 2352-2354. https://doi.org/10.1063/1.1687982

@article{f90c203e654849228ff02387b773e7ad,

title = "Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions",

abstract = "The modification in the temperature and field dependence of critical current density of high quality MgB 2 thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB 2 films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J C.",

author = "Shinde, {S. R.} and Ogale, {S. B.} and J. Higgins and Choudhary, {R. J.} and Kulkarni, {V. N.} and T. Venkatesan and H. Zheng and R. Ramesh and Pogrebnyakov, {A. V.} and Xu, {S. Y.} and Qi Li and Xi, {X. X.} and Redwing, {J. M.} and D. Kanjilal",

year = "2004",

month = mar,

day = "29",

doi = "10.1063/1.1687982",

language = "English (US)",

volume = "84",

pages = "2352--2354",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions

AU - Shinde, S. R.

AU - Ogale, S. B.

AU - Higgins, J.

AU - Choudhary, R. J.

AU - Kulkarni, V. N.

AU - Venkatesan, T.

AU - Zheng, H.

AU - Ramesh, R.

AU - Pogrebnyakov, A. V.

AU - Xu, S. Y.

AU - Li, Qi

AU - Xi, X. X.

AU - Redwing, J. M.

AU - Kanjilal, D.

PY - 2004/3/29

Y1 - 2004/3/29

N2 - The modification in the temperature and field dependence of critical current density of high quality MgB 2 thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB 2 films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J C.

AB - The modification in the temperature and field dependence of critical current density of high quality MgB 2 thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB 2 films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J C.

UR - http://www.scopus.com/inward/record.url?scp=11144357639&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11144357639&partnerID=8YFLogxK

U2 - 10.1063/1.1687982

DO - 10.1063/1.1687982

M3 - Article

AN - SCOPUS:11144357639

SN - 0003-6951

VL - 84

SP - 2352

EP - 2354

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Modification of critical current density of MgB ₂ films irradiated with 200 MeV Ag ions

Abstract

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