Modification of low κ materials for ULSI multilevel interconnects by ion implantation

Alok Nandini U. Roy; A. Mallikarjunan; A. Kumar; J. Fortin; G. S. Shekhawat; Robert Geer; Katherine Dovidenko; Eric Lifshin; H. Bakhru; T. M. Lu

Modification of low κ materials for ULSI multilevel interconnects by ion implantation

Alok Nandini U. Roy, A. Mallikarjunan, A. Kumar, J. Fortin, G. S. Shekhawat, Robert Geer, Katherine Dovidenko, Eric Lifshin, H. Bakhru, T. M. Lu

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Abstract

Thin films of low dielectric constant (κ) materials such as Xerogel (κ=1.76) and SiLK^TM(κ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 × 10¹⁵ cm^-2 and 1 × 10¹⁶ cm^-2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low κ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5× hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

Original language	English (US)
Pages (from-to)	349-354
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	716
State	Published - 2002
Event	Silicon Materials - Processing, Characterization and Reliability - San Francisco, CA, United States Duration: Apr 1 2002 → Apr 5 2002

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{38a1f06acc25497caf071df669962548,

title = "Modification of low κ materials for ULSI multilevel interconnects by ion implantation",

abstract = "Thin films of low dielectric constant (κ) materials such as Xerogel (κ=1.76) and SiLKTM(κ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 × 1015 cm-2 and 1 × 1016 cm-2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low κ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5× hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.",

author = "Roy, {Alok Nandini U.} and A. Mallikarjunan and A. Kumar and J. Fortin and Shekhawat, {G. S.} and Robert Geer and Katherine Dovidenko and Eric Lifshin and H. Bakhru and Lu, {T. M.}",

year = "2002",

language = "English (US)",

volume = "716",

pages = "349--354",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Silicon Materials - Processing, Characterization and Reliability ; Conference date: 01-04-2002 Through 05-04-2002",

}

TY - JOUR

T1 - Modification of low κ materials for ULSI multilevel interconnects by ion implantation

AU - Roy, Alok Nandini U.

AU - Mallikarjunan, A.

AU - Kumar, A.

AU - Fortin, J.

AU - Shekhawat, G. S.

AU - Geer, Robert

AU - Dovidenko, Katherine

AU - Lifshin, Eric

AU - Bakhru, H.

AU - Lu, T. M.

PY - 2002

Y1 - 2002

N2 - Thin films of low dielectric constant (κ) materials such as Xerogel (κ=1.76) and SiLKTM(κ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 × 1015 cm-2 and 1 × 1016 cm-2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low κ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5× hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

AB - Thin films of low dielectric constant (κ) materials such as Xerogel (κ=1.76) and SiLKTM(κ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 × 1015 cm-2 and 1 × 1016 cm-2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low κ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5× hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

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UR - http://www.scopus.com/inward/citedby.url?scp=0036954930&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036954930

SN - 0272-9172

VL - 716

SP - 349

EP - 354

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Silicon Materials - Processing, Characterization and Reliability

Y2 - 1 April 2002 through 5 April 2002

ER -

Modification of low κ materials for ULSI multilevel interconnects by ion implantation

Abstract

All Science Journal Classification (ASJC) codes

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