MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.

T. P. Chow, S Ashok, J. B. Baliga, W. Katz

Research output: Contribution to journal › Conference article › peer-review

Original language	English (US)
Pages (from-to)	284-285
Number of pages	2
Journal	Electrochemical Society Extended Abstracts
Volume	83-1
State	Published - Dec 1 1983

All Science Journal Classification (ASJC) codes

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title = "MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.",

author = "Chow, {T. P.} and S Ashok and Baliga, {J. B.} and W. Katz",

year = "1983",

month = dec,

day = "1",

language = "English (US)",

volume = "83-1",

pages = "284--285",

journal = "Electrochemical Society Extended Abstracts",

issn = "0160-4619",

}

TY - JOUR

T1 - MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.

AU - Chow, T. P.

AU - Ashok, S

AU - Baliga, J. B.

AU - Katz, W.

PY - 1983/12/1

Y1 - 1983/12/1

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UR - http://www.scopus.com/inward/citedby.url?scp=0021005876&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0021005876

SN - 0160-4619

VL - 83-1

SP - 284

EP - 285

JO - Electrochemical Society Extended Abstracts

JF - Electrochemical Society Extended Abstracts

ER -