MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.

Research output: Contribution to journal › Conference article › peer-review

Original language	English (US)
Pages (from-to)	284-285
Number of pages	2
Journal	Electrochemical Society Extended Abstracts
Volume	83-1
State	Published - 1983

All Science Journal Classification (ASJC) codes

@article{4f51a4b0d6724819a1b7fd11ed891735,

title = "MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.",

author = "Chow, \{T. P.\} and S. Ashok and Baliga, \{J. B.\} and W. Katz",

year = "1983",

language = "English (US)",

volume = "83-1",

pages = "284--285",

journal = "Electrochemical Society Extended Abstracts",

issn = "0160-4619",

}

TY - JOUR

T1 - MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.

AU - Chow, T. P.

AU - Ashok, S.

AU - Baliga, J. B.

AU - Katz, W.

PY - 1983

Y1 - 1983

UR - https://www.scopus.com/pages/publications/0021005876

UR - https://www.scopus.com/pages/publications/0021005876#tab=citedBy

M3 - Conference article

AN - SCOPUS:0021005876

SN - 0160-4619

VL - 83-1

SP - 284

EP - 285

JO - Electrochemical Society Extended Abstracts

JF - Electrochemical Society Extended Abstracts

ER -