MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.

T. P. Chow, S. Ashok, B. J. Baliga, W. Katz

Research output: Contribution to conference › Paper › peer-review

All Science Journal Classification (ASJC) codes

TY - CONF

T1 - MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.

AU - Chow, T. P.

AU - Ashok, S.

AU - Baliga, B. J.

AU - Katz, W.

PY - 1983

Y1 - 1983

UR - http://www.scopus.com/inward/record.url?scp=0020921652&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020921652&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0020921652

SP - 101

EP - 113

ER -