MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.

Research output: Contribution to conference › Paper › peer-review

All Science Journal Classification (ASJC) codes

TY - CONF

T1 - MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.

AU - Chow, T. P.

AU - Ashok, S.

AU - Baliga, B. J.

AU - Katz, W.

PY - 1983

Y1 - 1983

UR - https://www.scopus.com/pages/publications/0020921652

UR - https://www.scopus.com/pages/publications/0020921652#tab=citedBy

M3 - Paper

AN - SCOPUS:0020921652

SP - 101

EP - 113

ER -