Modulation-doped ZnSe/(Zn,Cd,Mn)Se quantum wells and superlattices

J. J. Berry; R. Knobel; O. Ray; W. Peoples; N. Samarth

doi:10.1116/1.591454

Modulation-doped ZnSe/(Zn,Cd,Mn)Se quantum wells and superlattices

J. J. Berry, R. Knobel, O. Ray, W. Peoples, N. Samarth

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Zn:Se flux ratio has a strong impact on the transport properties of buried two-dimensional electron gases (2DEGs), and can be correlated with the final surface morphology of the samples. The use of atomic force microscopy (AFM) as a diagnostic tool provides useful and efficient feedback about the sample quality. Optimized growth conditions have resulted in a roughly two-fold improvement in the low temperature mobility of both magnetic and nonmagnetic ZnSe-based 2DEGs.

Original language	English (US)
Pages (from-to)	1692-1696
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.591454
State	Published - May 2000

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.591454

Cite this

@article{737e3c2dd7874d54bade84af09edd210,

title = "Modulation-doped ZnSe/(Zn,Cd,Mn)Se quantum wells and superlattices",

abstract = "Zn:Se flux ratio has a strong impact on the transport properties of buried two-dimensional electron gases (2DEGs), and can be correlated with the final surface morphology of the samples. The use of atomic force microscopy (AFM) as a diagnostic tool provides useful and efficient feedback about the sample quality. Optimized growth conditions have resulted in a roughly two-fold improvement in the low temperature mobility of both magnetic and nonmagnetic ZnSe-based 2DEGs.",

author = "Berry, {J. J.} and R. Knobel and O. Ray and W. Peoples and N. Samarth",

year = "2000",

month = may,

doi = "10.1116/1.591454",

language = "English (US)",

volume = "18",

pages = "1692--1696",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Modulation-doped ZnSe/(Zn,Cd,Mn)Se quantum wells and superlattices

AU - Berry, J. J.

AU - Knobel, R.

AU - Ray, O.

AU - Peoples, W.

AU - Samarth, N.

PY - 2000/5

Y1 - 2000/5

N2 - Zn:Se flux ratio has a strong impact on the transport properties of buried two-dimensional electron gases (2DEGs), and can be correlated with the final surface morphology of the samples. The use of atomic force microscopy (AFM) as a diagnostic tool provides useful and efficient feedback about the sample quality. Optimized growth conditions have resulted in a roughly two-fold improvement in the low temperature mobility of both magnetic and nonmagnetic ZnSe-based 2DEGs.

AB - Zn:Se flux ratio has a strong impact on the transport properties of buried two-dimensional electron gases (2DEGs), and can be correlated with the final surface morphology of the samples. The use of atomic force microscopy (AFM) as a diagnostic tool provides useful and efficient feedback about the sample quality. Optimized growth conditions have resulted in a roughly two-fold improvement in the low temperature mobility of both magnetic and nonmagnetic ZnSe-based 2DEGs.

UR - http://www.scopus.com/inward/record.url?scp=0034186988&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034186988&partnerID=8YFLogxK

U2 - 10.1116/1.591454

DO - 10.1116/1.591454

M3 - Article

AN - SCOPUS:0034186988

SN - 1071-1023

VL - 18

SP - 1692

EP - 1696

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Modulation-doped ZnSe/(Zn,Cd,Mn)Se quantum wells and superlattices

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this