Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending
Weijie Wang, Jie Chen, James Spencer Lundh, Shahab Shervin, Seung Kyu Oh, Sara Pouladi, Zhoulyu Rao, Ja Yeon Kim, Min Ki Kwon, Xiaohang Li, Sukwon Choi, Jae Hyun Ryou
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