Molecular-beam epitaxial growth and characterization of (In 0.5Al 0.5) 1-xMn xAs-(In 0.5Ga 0.5) 1-xMn xAs: Thin films and superlattices

O. Maksimov; B. L. Sheu; P. Schiffer; N. Samarth

doi:10.1116/1.1878973

Molecular-beam epitaxial growth and characterization of (In _0.5Al _0.5) _1-xMn _xAs-(In _0.5Ga _0.5) _1-xMn _xAs: Thin films and superlattices

O. Maksimov, B. L. Sheu, P. Schiffer, N. Samarth

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We describe the growth and properties of (In0.5 Al0.5) 1-x Mnx As and (In0.5 Ga0.5) 1-x Mnx As epilayers and superlattices. We find that the structural quality of the epilayers is similar to that of the more extensively studied In1-x Mnx As and Ga1-x Mnx As magnetic semiconductors and that we can incorporate significantly larger amounts of Mn (∼12%) without phase segregation. Magnetization measurements indicate that the Curie temperatures of (In0.5 Ga0.5) 1-x Mnx As and (In0.5 Al0.5) 1-x Mnx As (x∼0.11) epilayers are 95 and 25 K, respectively. The Curie temperature of the (In0.5 Ga0.5) 1-x Mnx As (In0.5 Al0.5) 1-x Mnx As superlattices decreases with the increase of the Al (Al+Ga) ratio. We attribute this to a decreased overlap between the impurity band and the valence band because of an enhanced Mn acceptor activation energy.

Original language	English (US)
Pages (from-to)	1304-1307
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	3
DOIs	https://doi.org/10.1116/1.1878973
State	Published - 2005

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{dc7afe848fc94822ba06dc05f9dbe51f,

title = "Molecular-beam epitaxial growth and characterization of (In 0.5Al 0.5) 1-xMn xAs-(In 0.5Ga 0.5) 1-xMn xAs: Thin films and superlattices",

abstract = "We describe the growth and properties of (In0.5 Al0.5) 1-x Mnx As and (In0.5 Ga0.5) 1-x Mnx As epilayers and superlattices. We find that the structural quality of the epilayers is similar to that of the more extensively studied In1-x Mnx As and Ga1-x Mnx As magnetic semiconductors and that we can incorporate significantly larger amounts of Mn (∼12%) without phase segregation. Magnetization measurements indicate that the Curie temperatures of (In0.5 Ga0.5) 1-x Mnx As and (In0.5 Al0.5) 1-x Mnx As (x∼0.11) epilayers are 95 and 25 K, respectively. The Curie temperature of the (In0.5 Ga0.5) 1-x Mnx As (In0.5 Al0.5) 1-x Mnx As superlattices decreases with the increase of the Al (Al+Ga) ratio. We attribute this to a decreased overlap between the impurity band and the valence band because of an enhanced Mn acceptor activation energy.",

author = "O. Maksimov and Sheu, {B. L.} and P. Schiffer and N. Samarth",

note = "Funding Information: We acknowledge support from grants ONR N00014-99-1-0071, DARPA/ONR N00014-99-1-1093, DARPA N00014-00-1-0591, and NSF DMR-0101318. ",

year = "2005",

doi = "10.1116/1.1878973",

language = "English (US)",

volume = "23",

pages = "1304--1307",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

Molecular-beam epitaxial growth and characterization of (In _0.5Al _0.5) _1-xMn _xAs-(In _0.5Ga _0.5) _1-xMn _xAs: Thin films and superlattices. / Maksimov, O.; Sheu, B. L.; Schiffer, P. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 3, 2005, p. 1304-1307.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Molecular-beam epitaxial growth and characterization of (In 0.5Al 0.5) 1-xMn xAs-(In 0.5Ga 0.5) 1-xMn xAs

T2 - Thin films and superlattices

AU - Maksimov, O.

AU - Sheu, B. L.

AU - Schiffer, P.

AU - Samarth, N.

N1 - Funding Information: We acknowledge support from grants ONR N00014-99-1-0071, DARPA/ONR N00014-99-1-1093, DARPA N00014-00-1-0591, and NSF DMR-0101318.

PY - 2005

Y1 - 2005

N2 - We describe the growth and properties of (In0.5 Al0.5) 1-x Mnx As and (In0.5 Ga0.5) 1-x Mnx As epilayers and superlattices. We find that the structural quality of the epilayers is similar to that of the more extensively studied In1-x Mnx As and Ga1-x Mnx As magnetic semiconductors and that we can incorporate significantly larger amounts of Mn (∼12%) without phase segregation. Magnetization measurements indicate that the Curie temperatures of (In0.5 Ga0.5) 1-x Mnx As and (In0.5 Al0.5) 1-x Mnx As (x∼0.11) epilayers are 95 and 25 K, respectively. The Curie temperature of the (In0.5 Ga0.5) 1-x Mnx As (In0.5 Al0.5) 1-x Mnx As superlattices decreases with the increase of the Al (Al+Ga) ratio. We attribute this to a decreased overlap between the impurity band and the valence band because of an enhanced Mn acceptor activation energy.

AB - We describe the growth and properties of (In0.5 Al0.5) 1-x Mnx As and (In0.5 Ga0.5) 1-x Mnx As epilayers and superlattices. We find that the structural quality of the epilayers is similar to that of the more extensively studied In1-x Mnx As and Ga1-x Mnx As magnetic semiconductors and that we can incorporate significantly larger amounts of Mn (∼12%) without phase segregation. Magnetization measurements indicate that the Curie temperatures of (In0.5 Ga0.5) 1-x Mnx As and (In0.5 Al0.5) 1-x Mnx As (x∼0.11) epilayers are 95 and 25 K, respectively. The Curie temperature of the (In0.5 Ga0.5) 1-x Mnx As (In0.5 Al0.5) 1-x Mnx As superlattices decreases with the increase of the Al (Al+Ga) ratio. We attribute this to a decreased overlap between the impurity band and the valence band because of an enhanced Mn acceptor activation energy.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Molecular-beam epitaxial growth and characterization of (In _0.5Al _0.5) _1-xMn _xAs-(In _0.5Ga _0.5) _1-xMn _xAs: Thin films and superlattices

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