Molecular beam epitaxial growth and dielectric characterization of Ba 0.6Sr0.4TiO3 films

P. Fisher; M. Skowronski; P. A. Salvador; M. Snyder; J. Xu; M. Lanagan; O. Maksimov; V. D. Heydemann

doi:10.1557/proc-0966-t07-23

Molecular beam epitaxial growth and dielectric characterization of Ba _0.6Sr_0.4TiO₃ films

P. Fisher, M. Skowronski, P. A. Salvador, M. Snyder, J. Xu, M. Lanagan, O. Maksimov, V. D. Heydemann

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Ba_0.6Sr_0.4TiO₃ films were grown by molecular beam epitaxy on MgO(001) and LaAlO₃(001) substrates. The growth mode was determined to be two-dimensional by in-situ reflection high-energy electron diffraction. The films were structurally and dielectrically characterized ex-situ using X-ray diffraction, Rutherford backscattering spectrometry, and split cavity resonance mode dielectrometry. The structural and dielectric properties of the Ba_0.6Sr_0.4TiO₃ film grown on MgO were determined to be inferior to the film grown on LaAlO ₃, as was indicated by the broader rocking curve (0.59 deg. vs. 0.17 deg.) and higher dielectric loss (0.29 vs. 0.12).

Original language	English (US)
Title of host publication	Ferroelectrics and Multiferroics
Publisher	Materials Research Society
Pages	134-139
Number of pages	6
ISBN (Print)	9781604234183
DOIs	https://doi.org/10.1557/proc-0966-t07-23
State	Published - 2006
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: Nov 27 2006 → Dec 1 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	966
ISSN (Print)	0272-9172

Other

Other	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/27/06 → 12/1/06

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-0966-t07-23

Cite this

Fisher, P., Skowronski, M., Salvador, P. A., Snyder, M., Xu, J., Lanagan, M., Maksimov, O., & Heydemann, V. D. (2006). Molecular beam epitaxial growth and dielectric characterization of Ba _0.6Sr_0.4TiO₃ films. In Ferroelectrics and Multiferroics (pp. 134-139). (Materials Research Society Symposium Proceedings; Vol. 966). Materials Research Society. https://doi.org/10.1557/proc-0966-t07-23

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abstract = "Ba0.6Sr0.4TiO3 films were grown by molecular beam epitaxy on MgO(001) and LaAlO3(001) substrates. The growth mode was determined to be two-dimensional by in-situ reflection high-energy electron diffraction. The films were structurally and dielectrically characterized ex-situ using X-ray diffraction, Rutherford backscattering spectrometry, and split cavity resonance mode dielectrometry. The structural and dielectric properties of the Ba0.6Sr0.4TiO3 film grown on MgO were determined to be inferior to the film grown on LaAlO 3, as was indicated by the broader rocking curve (0.59 deg. vs. 0.17 deg.) and higher dielectric loss (0.29 vs. 0.12).",

author = "P. Fisher and M. Skowronski and Salvador, {P. A.} and M. Snyder and J. Xu and M. Lanagan and O. Maksimov and Heydemann, {V. D.}",

year = "2006",

doi = "10.1557/proc-0966-t07-23",

language = "English (US)",

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Fisher, P, Skowronski, M, Salvador, PA, Snyder, M, Xu, J , Lanagan, M, Maksimov, O & Heydemann, VD 2006, Molecular beam epitaxial growth and dielectric characterization of Ba _0.6Sr_0.4TiO₃ films. in Ferroelectrics and Multiferroics. Materials Research Society Symposium Proceedings, vol. 966, Materials Research Society, pp. 134-139, 2006 MRS Fall Meeting, Boston, MA, United States, 11/27/06. https://doi.org/10.1557/proc-0966-t07-23

Molecular beam epitaxial growth and dielectric characterization of Ba _0.6Sr_0.4TiO₃ films. / Fisher, P.; Skowronski, M.; Salvador, P. A. et al.
Ferroelectrics and Multiferroics. Materials Research Society, 2006. p. 134-139 (Materials Research Society Symposium Proceedings; Vol. 966).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Xu, J.

AU - Lanagan, M.

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N2 - Ba0.6Sr0.4TiO3 films were grown by molecular beam epitaxy on MgO(001) and LaAlO3(001) substrates. The growth mode was determined to be two-dimensional by in-situ reflection high-energy electron diffraction. The films were structurally and dielectrically characterized ex-situ using X-ray diffraction, Rutherford backscattering spectrometry, and split cavity resonance mode dielectrometry. The structural and dielectric properties of the Ba0.6Sr0.4TiO3 film grown on MgO were determined to be inferior to the film grown on LaAlO 3, as was indicated by the broader rocking curve (0.59 deg. vs. 0.17 deg.) and higher dielectric loss (0.29 vs. 0.12).

AB - Ba0.6Sr0.4TiO3 films were grown by molecular beam epitaxy on MgO(001) and LaAlO3(001) substrates. The growth mode was determined to be two-dimensional by in-situ reflection high-energy electron diffraction. The films were structurally and dielectrically characterized ex-situ using X-ray diffraction, Rutherford backscattering spectrometry, and split cavity resonance mode dielectrometry. The structural and dielectric properties of the Ba0.6Sr0.4TiO3 film grown on MgO were determined to be inferior to the film grown on LaAlO 3, as was indicated by the broader rocking curve (0.59 deg. vs. 0.17 deg.) and higher dielectric loss (0.29 vs. 0.12).

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