Molecular beam epitaxy of CdSe and the derivative alloys Zn1-x Cd x Se and Cd1-x M x Se

N. Samarth; H. Luo; J. K. Furdyna; S. B. Qadri; Y. R. Lee; A. K. Ramdas; N. Otsuka

doi:10.1007/BF02651276

Molecular beam epitaxy of CdSe and the derivative alloys Zn_1-x Cd_x Se and Cd_1-x M_x Se

N. Samarth
, H. Luo
, J. K. Furdyna
, S. B. Qadri
, Y. R. Lee
, A. K. Ramdas
, N. Otsuka

Physics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We report the epitaxial growth of CdSe, Zn_1-x Cd_x Se (0 ≤x ≤ 1) and Cd_1-x Mn_x Se (0 ≤x ≤ 0.8) on (100) GaAs. X-ray diffraction (XRD), electron diffraction and transmission electron microscopy (TEM) indicate that all the epilayers have the cubic (zinc-blende) structure of the GaAs substrate. The energy gaps of these materials were measured using reflectivity measurements. We also report the growth of ZnSe/Zn_1-x Cd_x Se superlattices. TEM and XRD measurements show that high quality modulated structures with sharp interfaces are possible.

Original language	English (US)
Pages (from-to)	543-547
Number of pages	5
Journal	Journal of Electronic Materials
Volume	19
Issue number	6
DOIs	https://doi.org/10.1007/BF02651276
State	Published - Jun 1990

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/BF02651276

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title = "Molecular beam epitaxy of CdSe and the derivative alloys Zn1-x Cd x Se and Cd1-x M x Se",

abstract = "We report the epitaxial growth of CdSe, Zn1-x Cd x Se (0 ≤x ≤ 1) and Cd1-x Mn x Se (0 ≤x ≤ 0.8) on (100) GaAs. X-ray diffraction (XRD), electron diffraction and transmission electron microscopy (TEM) indicate that all the epilayers have the cubic (zinc-blende) structure of the GaAs substrate. The energy gaps of these materials were measured using reflectivity measurements. We also report the growth of ZnSe/Zn1-x Cd x Se superlattices. TEM and XRD measurements show that high quality modulated structures with sharp interfaces are possible.",

author = "N. Samarth and H. Luo and Furdyna, \{J. K.\} and Qadri, \{S. B.\} and Lee, \{Y. R.\} and Ramdas, \{A. K.\} and N. Otsuka",

year = "1990",

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doi = "10.1007/BF02651276",

language = "English (US)",

volume = "19",

pages = "543--547",

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T1 - Molecular beam epitaxy of CdSe and the derivative alloys Zn1-x Cd x Se and Cd1-x M x Se

AU - Samarth, N.

AU - Luo, H.

AU - Furdyna, J. K.

AU - Qadri, S. B.

AU - Lee, Y. R.

AU - Ramdas, A. K.

AU - Otsuka, N.

PY - 1990/6

Y1 - 1990/6

N2 - We report the epitaxial growth of CdSe, Zn1-x Cd x Se (0 ≤x ≤ 1) and Cd1-x Mn x Se (0 ≤x ≤ 0.8) on (100) GaAs. X-ray diffraction (XRD), electron diffraction and transmission electron microscopy (TEM) indicate that all the epilayers have the cubic (zinc-blende) structure of the GaAs substrate. The energy gaps of these materials were measured using reflectivity measurements. We also report the growth of ZnSe/Zn1-x Cd x Se superlattices. TEM and XRD measurements show that high quality modulated structures with sharp interfaces are possible.

AB - We report the epitaxial growth of CdSe, Zn1-x Cd x Se (0 ≤x ≤ 1) and Cd1-x Mn x Se (0 ≤x ≤ 0.8) on (100) GaAs. X-ray diffraction (XRD), electron diffraction and transmission electron microscopy (TEM) indicate that all the epilayers have the cubic (zinc-blende) structure of the GaAs substrate. The energy gaps of these materials were measured using reflectivity measurements. We also report the growth of ZnSe/Zn1-x Cd x Se superlattices. TEM and XRD measurements show that high quality modulated structures with sharp interfaces are possible.

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DO - 10.1007/BF02651276

M3 - Article

AN - SCOPUS:0025449362

SN - 0361-5235

VL - 19

SP - 543

EP - 547

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 6

ER -

Molecular beam epitaxy of CdSe and the derivative alloys Zn_1-x Cd_x Se and Cd_1-x M_x Se

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