Molecular beam epitaxy of MnAs/ZnSe hybrid ferromagnetic/semiconductor heterostructures

J. J. Berry; S. H. Chun; K. C. Ku; N. Samarth; I. Malajovich; D. D. Awschalom

doi:10.1063/1.1328373

Molecular beam epitaxy of MnAs/ZnSe hybrid ferromagnetic/semiconductor heterostructures

J. J. Berry, S. H. Chun, K. C. Ku, N. Samarth, I. Malajovich, D. D. Awschalom

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Abstract

We report the use of molecular beam epitaxy to create hybrid ferromagnetic/semiconductor heterostructures composed of MnAs and ZnSe, with a Curie temperature of 325 K. The presence of a ZnSe buffer layer exclusively stabilizes the type-B orientation of MnAs, in which the (1̄101) MnAs and (001) ZnSe planes are parallel. Single-phase type-B αMnAs/ZnSe heterostructures yield magnetic properties comparable to those reported in the literature for MnAs/GaAs heterostructures. Variations in growth conditions also permit the stabilization of a strained, nonferromagnetic phase that can coexist with the ferromagnetic phase even at room temperature.

Original language	English (US)
Pages (from-to)	3812-3814
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	23
DOIs	https://doi.org/10.1063/1.1328373
State	Published - Dec 4 2000

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{7362cc22c361413ba9210bdfa90c604f,

title = "Molecular beam epitaxy of MnAs/ZnSe hybrid ferromagnetic/semiconductor heterostructures",

abstract = "We report the use of molecular beam epitaxy to create hybrid ferromagnetic/semiconductor heterostructures composed of MnAs and ZnSe, with a Curie temperature of 325 K. The presence of a ZnSe buffer layer exclusively stabilizes the type-B orientation of MnAs, in which the ({\=1}101) MnAs and (001) ZnSe planes are parallel. Single-phase type-B αMnAs/ZnSe heterostructures yield magnetic properties comparable to those reported in the literature for MnAs/GaAs heterostructures. Variations in growth conditions also permit the stabilization of a strained, nonferromagnetic phase that can coexist with the ferromagnetic phase even at room temperature.",

author = "Berry, {J. J.} and Chun, {S. H.} and Ku, {K. C.} and N. Samarth and I. Malajovich and Awschalom, {D. D.}",

year = "2000",

month = dec,

day = "4",

doi = "10.1063/1.1328373",

language = "English (US)",

volume = "77",

pages = "3812--3814",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Molecular beam epitaxy of MnAs/ZnSe hybrid ferromagnetic/semiconductor heterostructures

AU - Berry, J. J.

AU - Chun, S. H.

AU - Ku, K. C.

AU - Samarth, N.

AU - Malajovich, I.

AU - Awschalom, D. D.

PY - 2000/12/4

Y1 - 2000/12/4

N2 - We report the use of molecular beam epitaxy to create hybrid ferromagnetic/semiconductor heterostructures composed of MnAs and ZnSe, with a Curie temperature of 325 K. The presence of a ZnSe buffer layer exclusively stabilizes the type-B orientation of MnAs, in which the (1̄101) MnAs and (001) ZnSe planes are parallel. Single-phase type-B αMnAs/ZnSe heterostructures yield magnetic properties comparable to those reported in the literature for MnAs/GaAs heterostructures. Variations in growth conditions also permit the stabilization of a strained, nonferromagnetic phase that can coexist with the ferromagnetic phase even at room temperature.

AB - We report the use of molecular beam epitaxy to create hybrid ferromagnetic/semiconductor heterostructures composed of MnAs and ZnSe, with a Curie temperature of 325 K. The presence of a ZnSe buffer layer exclusively stabilizes the type-B orientation of MnAs, in which the (1̄101) MnAs and (001) ZnSe planes are parallel. Single-phase type-B αMnAs/ZnSe heterostructures yield magnetic properties comparable to those reported in the literature for MnAs/GaAs heterostructures. Variations in growth conditions also permit the stabilization of a strained, nonferromagnetic phase that can coexist with the ferromagnetic phase even at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=0000429246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000429246&partnerID=8YFLogxK

U2 - 10.1063/1.1328373

DO - 10.1063/1.1328373

M3 - Article

AN - SCOPUS:0000429246

SN - 0003-6951

VL - 77

SP - 3812

EP - 3814

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Molecular beam epitaxy of MnAs/ZnSe hybrid ferromagnetic/semiconductor heterostructures

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