Molecular beam epitaxy of Sm 2O 3, Dy 2O 3, and Ho 2O 3 on Si (111)

H. S. Craft; R. Collazo; Z. Sitar; J. P. Maria

doi:10.1116/1.2216721

Molecular beam epitaxy of Sm ₂O ₃, Dy ₂O ₃, and Ho ₂O ₃ on Si (111)

H. S. Craft, R. Collazo, Z. Sitar, J. P. Maria

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report on the epitaxial deposition of Sm ₂O ₃, Dy ₂O ₃, and Ho ₂O ₃ films on Si (111) substrates as progress towards developing a predictive model for gate oxide selection. To date, films have been characterized by reflection high-energy electron diffraction, x-ray diffraction (XRD), and x-ray photoemission spectroscopy (XPS). In the case of Sm ₂O ₃, difficulty was encountered in achieving the growth of phase pure films; growth of the desired bixbyite oxide phase was accompanied by significant amounts of monoclinic oxide as detected by XRD. Dy ₂O ₃ and Ho ₂O ₃ films can be produced free of unwanted phases when deposited using a background pressure of 1 × 10 ^-6 torr O ₂/O ₃ and a substrate temperature between 425 and 550°C. Dy ₂O ₃ films with an x-ray peak width of 0.6° in ω were obtained. XPS studies of the Dy ₂O ₃/Si interface are in progress, and verify the phase purity of the films.

Original language	English (US)
Pages (from-to)	2105-2110
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	4
DOIs	https://doi.org/10.1116/1.2216721
State	Published - Jul 2006

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{8df8b2f53b1444898080070302d3fca9,

title = "Molecular beam epitaxy of Sm 2O 3, Dy 2O 3, and Ho 2O 3 on Si (111)",

abstract = "We report on the epitaxial deposition of Sm 2O 3, Dy 2O 3, and Ho 2O 3 films on Si (111) substrates as progress towards developing a predictive model for gate oxide selection. To date, films have been characterized by reflection high-energy electron diffraction, x-ray diffraction (XRD), and x-ray photoemission spectroscopy (XPS). In the case of Sm 2O 3, difficulty was encountered in achieving the growth of phase pure films; growth of the desired bixbyite oxide phase was accompanied by significant amounts of monoclinic oxide as detected by XRD. Dy 2O 3 and Ho 2O 3 films can be produced free of unwanted phases when deposited using a background pressure of 1 × 10 -6 torr O 2/O 3 and a substrate temperature between 425 and 550°C. Dy 2O 3 films with an x-ray peak width of 0.6° in ω were obtained. XPS studies of the Dy 2O 3/Si interface are in progress, and verify the phase purity of the films.",

author = "Craft, {H. S.} and R. Collazo and Z. Sitar and Maria, {J. P.}",

note = "Funding Information: The authors gratefully acknowledge The Semiconductor Research Corporation for supporting this research. The authors would also like to thank Dr. G. Lucovsky of NCSU for useful technical discussions.",

year = "2006",

month = jul,

doi = "10.1116/1.2216721",

language = "English (US)",

volume = "24",

pages = "2105--2110",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Molecular beam epitaxy of Sm 2O 3, Dy 2O 3, and Ho 2O 3 on Si (111)

AU - Craft, H. S.

AU - Collazo, R.

AU - Sitar, Z.

AU - Maria, J. P.

N1 - Funding Information: The authors gratefully acknowledge The Semiconductor Research Corporation for supporting this research. The authors would also like to thank Dr. G. Lucovsky of NCSU for useful technical discussions.

PY - 2006/7

Y1 - 2006/7

N2 - We report on the epitaxial deposition of Sm 2O 3, Dy 2O 3, and Ho 2O 3 films on Si (111) substrates as progress towards developing a predictive model for gate oxide selection. To date, films have been characterized by reflection high-energy electron diffraction, x-ray diffraction (XRD), and x-ray photoemission spectroscopy (XPS). In the case of Sm 2O 3, difficulty was encountered in achieving the growth of phase pure films; growth of the desired bixbyite oxide phase was accompanied by significant amounts of monoclinic oxide as detected by XRD. Dy 2O 3 and Ho 2O 3 films can be produced free of unwanted phases when deposited using a background pressure of 1 × 10 -6 torr O 2/O 3 and a substrate temperature between 425 and 550°C. Dy 2O 3 films with an x-ray peak width of 0.6° in ω were obtained. XPS studies of the Dy 2O 3/Si interface are in progress, and verify the phase purity of the films.

AB - We report on the epitaxial deposition of Sm 2O 3, Dy 2O 3, and Ho 2O 3 films on Si (111) substrates as progress towards developing a predictive model for gate oxide selection. To date, films have been characterized by reflection high-energy electron diffraction, x-ray diffraction (XRD), and x-ray photoemission spectroscopy (XPS). In the case of Sm 2O 3, difficulty was encountered in achieving the growth of phase pure films; growth of the desired bixbyite oxide phase was accompanied by significant amounts of monoclinic oxide as detected by XRD. Dy 2O 3 and Ho 2O 3 films can be produced free of unwanted phases when deposited using a background pressure of 1 × 10 -6 torr O 2/O 3 and a substrate temperature between 425 and 550°C. Dy 2O 3 films with an x-ray peak width of 0.6° in ω were obtained. XPS studies of the Dy 2O 3/Si interface are in progress, and verify the phase purity of the films.

UR - http://www.scopus.com/inward/record.url?scp=33746519210&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746519210&partnerID=8YFLogxK

U2 - 10.1116/1.2216721

DO - 10.1116/1.2216721

M3 - Article

AN - SCOPUS:33746519210

SN - 1071-1023

VL - 24

SP - 2105

EP - 2110

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Molecular beam epitaxy of Sm ₂O ₃, Dy ₂O ₃, and Ho ₂O ₃ on Si (111)

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