Molecular beam epitaxy of Zn1-xCdxSe epilayers and ZnSe/Zn1-xCdxSe superlattices

N. Samarth, H. Luo, J. K. Furdyna, R. G. Alonso, Y. R. Lee, A. K. Ramdas, S. B. Qadri, N. Otsuka

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We have investigated the epitaxial growth of Zn1-x Cd xSe epilayers and ZnSe/Zn1-x CdxSe superlattices (0≤x≤1) on (100)GaAs. Although thick epilayers of Zn 1-x CdxSe are prone to defect formation with increasing Cd content, the structural and optical characteristics improve remarkably when Zn1-x CdxSe is in the form of thin layers within ZnSe/Zn1-x CdxSe superlattices. High quality superlattices can be grown for x≤0.35. The characterization of these systems using transmission electron microscopy, x-ray diffraction, reflectivity, and photoluminescence is reported.

Original languageEnglish (US)
Pages (from-to)1163-1165
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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