Molecular doping control at a topological insulator surface: F 4-TCNQ on Bi2Se3

J. Wang; A. S. Hewitt; R. Kumar; J. Boltersdorf; T. Guan; F. Hunte; P. A. Maggard; J. E. Brom; J. M. Redwing; D. B. Dougherty

doi:10.1021/jp412690h

Molecular doping control at a topological insulator surface: F ₄-TCNQ on Bi₂Se₃

J. Wang, A. S. Hewitt, R. Kumar, J. Boltersdorf, T. Guan, F. Hunte, P. A. Maggard, J. E. Brom, J. M. Redwing, D. B. Dougherty

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11 Scopus citations

Abstract

Recent electrical measurements have accessed transport in the topological surface state band of thin exfoliated samples of Bi₂Se₃ by removing the bulk n-type doping by contact with thin films of the molecular acceptor F₄-TCNQ. Here we report on the film growth and interfacial electronic characterization of F₄-TCNQ grown on Bi₂Se ₃. Atomic force microscopy shows wetting layer formation followed by 3D island growth. X-ray photoelectron spectroscopy is consistent with this picture and also shows that charge transferred to the molecular layer is localized on nitrogen atoms. Ultraviolet photoelectron spectroscopy shows a work function increase and an upward shift of the valence band edge that suggest significant reduction in carrier density at the Bi₂Se₃ surface.

Original language	English (US)
Pages (from-to)	14860-14865
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	118
Issue number	27
DOIs	https://doi.org/10.1021/jp412690h
State	Published - Jul 10 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/jp412690h

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title = "Molecular doping control at a topological insulator surface: F 4-TCNQ on Bi2Se3",

abstract = "Recent electrical measurements have accessed transport in the topological surface state band of thin exfoliated samples of Bi2Se3 by removing the bulk n-type doping by contact with thin films of the molecular acceptor F4-TCNQ. Here we report on the film growth and interfacial electronic characterization of F4-TCNQ grown on Bi2Se 3. Atomic force microscopy shows wetting layer formation followed by 3D island growth. X-ray photoelectron spectroscopy is consistent with this picture and also shows that charge transferred to the molecular layer is localized on nitrogen atoms. Ultraviolet photoelectron spectroscopy shows a work function increase and an upward shift of the valence band edge that suggest significant reduction in carrier density at the Bi2Se3 surface.",

author = "J. Wang and Hewitt, {A. S.} and R. Kumar and J. Boltersdorf and T. Guan and F. Hunte and Maggard, {P. A.} and Brom, {J. E.} and Redwing, {J. M.} and Dougherty, {D. B.}",

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doi = "10.1021/jp412690h",

language = "English (US)",

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T1 - Molecular doping control at a topological insulator surface

T2 - F 4-TCNQ on Bi2Se3

AU - Wang, J.

AU - Hewitt, A. S.

AU - Kumar, R.

AU - Boltersdorf, J.

AU - Guan, T.

AU - Hunte, F.

AU - Maggard, P. A.

AU - Brom, J. E.

AU - Redwing, J. M.

AU - Dougherty, D. B.

PY - 2014/7/10

Y1 - 2014/7/10

N2 - Recent electrical measurements have accessed transport in the topological surface state band of thin exfoliated samples of Bi2Se3 by removing the bulk n-type doping by contact with thin films of the molecular acceptor F4-TCNQ. Here we report on the film growth and interfacial electronic characterization of F4-TCNQ grown on Bi2Se 3. Atomic force microscopy shows wetting layer formation followed by 3D island growth. X-ray photoelectron spectroscopy is consistent with this picture and also shows that charge transferred to the molecular layer is localized on nitrogen atoms. Ultraviolet photoelectron spectroscopy shows a work function increase and an upward shift of the valence band edge that suggest significant reduction in carrier density at the Bi2Se3 surface.

AB - Recent electrical measurements have accessed transport in the topological surface state band of thin exfoliated samples of Bi2Se3 by removing the bulk n-type doping by contact with thin films of the molecular acceptor F4-TCNQ. Here we report on the film growth and interfacial electronic characterization of F4-TCNQ grown on Bi2Se 3. Atomic force microscopy shows wetting layer formation followed by 3D island growth. X-ray photoelectron spectroscopy is consistent with this picture and also shows that charge transferred to the molecular layer is localized on nitrogen atoms. Ultraviolet photoelectron spectroscopy shows a work function increase and an upward shift of the valence band edge that suggest significant reduction in carrier density at the Bi2Se3 surface.

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Molecular doping control at a topological insulator surface: F ₄-TCNQ on Bi₂Se₃

Abstract

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