Molecular Orbital Gating Surface-Enhanced Raman Scattering

Chenyang Guo, Xing Chen, Song Yuan Ding, Dirk Mayer, Qingling Wang, Zhikai Zhao, Lifa Ni, Haitao Liu, Takhee Lee, Bingqian Xu, Dong Xiang

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


One of the promising approaches to meet the urgent demand for further device miniaturization is to create functional devices using single molecules. Although various single-molecule electronic devices have been demonstrated recently, single-molecule optical devices which use external stimulations to control the optical response of a single molecule have rarely been reported. Here, we propose and demonstrate a field-effect Raman scattering (FERS) device with a single molecule, an optical counterpart to field-effect transistors (a key component of modern electronics). With our devices, the gap size between electrodes can be precisely adjusted at subangstrom accuracy to form single molecular junctions as well as to reach the maximum performance of Raman scattering via plasmonic enhancement. Based on this maximum performance, we demonstrated that the intensity of Raman scattering can be further enhanced by an additional â40% if the orbitals of the molecules bridged two electrodes were shifted by a gating voltage. This finding not only provides a method to increase the sensitivity of Raman scattering beyond the limit of plasmonic enhancement, but also makes it feasible to realize addressable functional FERS devices with a gate electrode array.

Original languageEnglish (US)
Pages (from-to)11229-11235
Number of pages7
JournalACS nano
Issue number11
StatePublished - Nov 27 2018

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


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