Monitoring of chemical oxide removal from silicon surfaces using a surface photovoltage technique

M. Brubaker; P. Roman; J. Staffa; J. Ruzyllo

doi:10.1149/1.1390660

Monitoring of chemical oxide removal from silicon surfaces using a surface photovoltage technique

M. Brubaker, P. Roman, J. Staffa, J. Ruzyllo

Materials Research Institute (MRI)

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3 Scopus citations

Abstract

The goal of this study was to develop a method for in-line real-time monitoring of chemical oxide removal in integrated processes requiring an oxide etching step. Specifically, the surface photovoltage technique based noncontact surface charge profiling (SCP) method was investigated. The surface recombination lifetime measured by SCP is sensitive to the presence of chemical oxide on the surface formed in ammonia-hydrogen peroxide-water (APM) and sulfuric acid-hydrogen peroxide-water (SPM) solutions, but not in hydrochloric acid-hydrogen peroxide-water (HPM) solution. It is suggested that the recombination centers are most likely associated with interfacial bonding defects and iron contamination in APM chemical oxides and with oxidized sulfur in SPM chemical oxides.

Original language	English (US)
Pages (from-to)	130-132
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	1
Issue number	3
DOIs	https://doi.org/10.1149/1.1390660
State	Published - Sep 1998

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.1390660

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abstract = "The goal of this study was to develop a method for in-line real-time monitoring of chemical oxide removal in integrated processes requiring an oxide etching step. Specifically, the surface photovoltage technique based noncontact surface charge profiling (SCP) method was investigated. The surface recombination lifetime measured by SCP is sensitive to the presence of chemical oxide on the surface formed in ammonia-hydrogen peroxide-water (APM) and sulfuric acid-hydrogen peroxide-water (SPM) solutions, but not in hydrochloric acid-hydrogen peroxide-water (HPM) solution. It is suggested that the recombination centers are most likely associated with interfacial bonding defects and iron contamination in APM chemical oxides and with oxidized sulfur in SPM chemical oxides.",

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AU - Brubaker, M.

AU - Roman, P.

AU - Staffa, J.

AU - Ruzyllo, J.

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AB - The goal of this study was to develop a method for in-line real-time monitoring of chemical oxide removal in integrated processes requiring an oxide etching step. Specifically, the surface photovoltage technique based noncontact surface charge profiling (SCP) method was investigated. The surface recombination lifetime measured by SCP is sensitive to the presence of chemical oxide on the surface formed in ammonia-hydrogen peroxide-water (APM) and sulfuric acid-hydrogen peroxide-water (SPM) solutions, but not in hydrochloric acid-hydrogen peroxide-water (HPM) solution. It is suggested that the recombination centers are most likely associated with interfacial bonding defects and iron contamination in APM chemical oxides and with oxidized sulfur in SPM chemical oxides.

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Monitoring of chemical oxide removal from silicon surfaces using a surface photovoltage technique

Abstract

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