Abstract
In this work, a new commercial system allowing non-contact measurement of the surface charge is used to monitor the condition of the silicon surface following HF/water etch. Results obtained demonstrate that by monitoring changes of surface charge using this system, a truly non-invasive, instant and easy to carry out characterization of Si surfaces after HF/water etch can be accomplished. The results show that HF/water exposure adds positive charge to the silicon surface. Change in the surface charge, considered to be indicative of the change in the electro-chemical condition of the surface, appears to precede initiation of the oxide etching process, and is proposed to be a factor in initiating etching reactions that involve mainly negatively charged species.
Original language | English (US) |
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Pages (from-to) | 401-406 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 386 |
DOIs | |
State | Published - 1995 |
Event | Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 17 1995 → Apr 21 1995 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering