Monitoring of HF/H2O treated silicon surfaces using non-contact surface charge measurements

P. Roman, D. Hwang, K. Torek, J. Ruzyllo, E. Kamieniecki

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations


In this work, a new commercial system allowing non-contact measurement of the surface charge is used to monitor the condition of the silicon surface following HF/water etch. Results obtained demonstrate that by monitoring changes of surface charge using this system, a truly non-invasive, instant and easy to carry out characterization of Si surfaces after HF/water etch can be accomplished. The results show that HF/water exposure adds positive charge to the silicon surface. Change in the surface charge, considered to be indicative of the change in the electro-chemical condition of the surface, appears to precede initiation of the oxide etching process, and is proposed to be a factor in initiating etching reactions that involve mainly negatively charged species.

Original languageEnglish (US)
Pages (from-to)401-406
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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