Monolithic integration of high efficiency III-nitride LEDs and high breakdown Schottky barrier diodes

Jian Xu; Jie Liu; Li Wang; Zhenyu Jiang

doi:10.1109/IPCon.2015.7323752

Monolithic integration of high efficiency III-nitride LEDs and high breakdown Schottky barrier diodes

Jian Xu, Jie Liu, Li Wang, Zhenyu Jiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Integration of III-nitride light emitting diodes (LEDs) and Schottky barrier diodes (SBDs) have been proposed for various applications, such as electrostatic discharge (ESD) protection and alternating current-LEDs (AC-LEDs) with on-chip bridge rectifiers. Nevertheless, it is generally perceived that the dry etching-induced nitrogen vacancies in GaN lattice render a high surface concentration of defect donors, and lead to poor SBD performance in terms of high saturation current and very low breakdown voltage.

Original language	English (US)
Title of host publication	2015 IEEE Photonics Conference, IPC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	51-52
Number of pages	2
ISBN (Electronic)	9781479974658
DOIs	https://doi.org/10.1109/IPCon.2015.7323752
State	Published - Nov 9 2015
Event	IEEE Photonics Conference, IPC 2015 - Reston, United States Duration: Aug 30 2015 → Aug 31 2015

Publication series

Name	2015 IEEE Photonics Conference, IPC 2015

Other

Other	IEEE Photonics Conference, IPC 2015
Country/Territory	United States
City	Reston
Period	8/30/15 → 8/31/15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/IPCon.2015.7323752

Cite this

@inproceedings{d626eabcdfa34feea904886f7132e9cf,

title = "Monolithic integration of high efficiency III-nitride LEDs and high breakdown Schottky barrier diodes",

abstract = "Integration of III-nitride light emitting diodes (LEDs) and Schottky barrier diodes (SBDs) have been proposed for various applications, such as electrostatic discharge (ESD) protection and alternating current-LEDs (AC-LEDs) with on-chip bridge rectifiers. Nevertheless, it is generally perceived that the dry etching-induced nitrogen vacancies in GaN lattice render a high surface concentration of defect donors, and lead to poor SBD performance in terms of high saturation current and very low breakdown voltage.",

author = "Jian Xu and Jie Liu and Li Wang and Zhenyu Jiang",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Photonics Conference, IPC 2015 ; Conference date: 30-08-2015 Through 31-08-2015",

year = "2015",

month = nov,

day = "9",

doi = "10.1109/IPCon.2015.7323752",

language = "English (US)",

series = "2015 IEEE Photonics Conference, IPC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "51--52",

booktitle = "2015 IEEE Photonics Conference, IPC 2015",

address = "United States",

}

Xu, J, Liu, J, Wang, L & Jiang, Z 2015, Monolithic integration of high efficiency III-nitride LEDs and high breakdown Schottky barrier diodes. in 2015 IEEE Photonics Conference, IPC 2015., 7323752, 2015 IEEE Photonics Conference, IPC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 51-52, IEEE Photonics Conference, IPC 2015, Reston, United States, 8/30/15. https://doi.org/10.1109/IPCon.2015.7323752

Monolithic integration of high efficiency III-nitride LEDs and high breakdown Schottky barrier diodes. / Xu, Jian; Liu, Jie; Wang, Li et al.
2015 IEEE Photonics Conference, IPC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 51-52 7323752 (2015 IEEE Photonics Conference, IPC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Monolithic integration of high efficiency III-nitride LEDs and high breakdown Schottky barrier diodes

AU - Xu, Jian

AU - Liu, Jie

AU - Wang, Li

AU - Jiang, Zhenyu

PY - 2015/11/9

Y1 - 2015/11/9

N2 - Integration of III-nitride light emitting diodes (LEDs) and Schottky barrier diodes (SBDs) have been proposed for various applications, such as electrostatic discharge (ESD) protection and alternating current-LEDs (AC-LEDs) with on-chip bridge rectifiers. Nevertheless, it is generally perceived that the dry etching-induced nitrogen vacancies in GaN lattice render a high surface concentration of defect donors, and lead to poor SBD performance in terms of high saturation current and very low breakdown voltage.

AB - Integration of III-nitride light emitting diodes (LEDs) and Schottky barrier diodes (SBDs) have been proposed for various applications, such as electrostatic discharge (ESD) protection and alternating current-LEDs (AC-LEDs) with on-chip bridge rectifiers. Nevertheless, it is generally perceived that the dry etching-induced nitrogen vacancies in GaN lattice render a high surface concentration of defect donors, and lead to poor SBD performance in terms of high saturation current and very low breakdown voltage.

UR - http://www.scopus.com/inward/record.url?scp=84964888310&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964888310&partnerID=8YFLogxK

U2 - 10.1109/IPCon.2015.7323752

DO - 10.1109/IPCon.2015.7323752

M3 - Conference contribution

AN - SCOPUS:84964888310

T3 - 2015 IEEE Photonics Conference, IPC 2015

SP - 51

EP - 52

BT - 2015 IEEE Photonics Conference, IPC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Photonics Conference, IPC 2015

Y2 - 30 August 2015 through 31 August 2015

ER -

Monolithic integration of high efficiency III-nitride LEDs and high breakdown Schottky barrier diodes

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