Monomorph characteristics of semiconductive piezoceramics

Kenji Uchino; Mikihiko Yoshizaki; Atsushi Nagao

doi:10.7567/JJAPS.26S2.201

Monomorph characteristics of semiconductive piezoceramics

Kenji Uchino, Mikihiko Yoshizaki, Atsushi Nagao

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

New type piezoelectric bending actuators, monomorphs, originate basically from a metal- semiconductor contact (Schottky barrier) effect. This paper deals with a more sophisticated model, Metal-Insulator-Semiconductor (MIS) structure, to explain detailed monomorph characteristics. Furthermore, voltage versus current relation was measured on the actuator sample to obtain better understanding on the monomorph. The electric charge flow during half a voltage cycle is of the order of 2.6 C/m², which is several times larger than the usual charge flow associated with the polarization reversal.

Original language	English (US)
Pages (from-to)	201-203
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	26
DOIs	https://doi.org/10.7567/JJAPS.26S2.201
State	Published - Jan 1987

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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@article{9596e88f9d9548559cab866f1d904ea8,

title = "Monomorph characteristics of semiconductive piezoceramics",

abstract = "New type piezoelectric bending actuators, monomorphs, originate basically from a metal- semiconductor contact (Schottky barrier) effect. This paper deals with a more sophisticated model, Metal-Insulator-Semiconductor (MIS) structure, to explain detailed monomorph characteristics. Furthermore, voltage versus current relation was measured on the actuator sample to obtain better understanding on the monomorph. The electric charge flow during half a voltage cycle is of the order of 2.6 C/m2, which is several times larger than the usual charge flow associated with the polarization reversal.",

author = "Kenji Uchino and Mikihiko Yoshizaki and Atsushi Nagao",

year = "1987",

month = jan,

doi = "10.7567/JJAPS.26S2.201",

language = "English (US)",

volume = "26",

pages = "201--203",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - Monomorph characteristics of semiconductive piezoceramics

AU - Uchino, Kenji

AU - Yoshizaki, Mikihiko

AU - Nagao, Atsushi

PY - 1987/1

Y1 - 1987/1

N2 - New type piezoelectric bending actuators, monomorphs, originate basically from a metal- semiconductor contact (Schottky barrier) effect. This paper deals with a more sophisticated model, Metal-Insulator-Semiconductor (MIS) structure, to explain detailed monomorph characteristics. Furthermore, voltage versus current relation was measured on the actuator sample to obtain better understanding on the monomorph. The electric charge flow during half a voltage cycle is of the order of 2.6 C/m2, which is several times larger than the usual charge flow associated with the polarization reversal.

AB - New type piezoelectric bending actuators, monomorphs, originate basically from a metal- semiconductor contact (Schottky barrier) effect. This paper deals with a more sophisticated model, Metal-Insulator-Semiconductor (MIS) structure, to explain detailed monomorph characteristics. Furthermore, voltage versus current relation was measured on the actuator sample to obtain better understanding on the monomorph. The electric charge flow during half a voltage cycle is of the order of 2.6 C/m2, which is several times larger than the usual charge flow associated with the polarization reversal.

UR - http://www.scopus.com/inward/record.url?scp=0042145079&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042145079&partnerID=8YFLogxK

U2 - 10.7567/JJAPS.26S2.201

DO - 10.7567/JJAPS.26S2.201

M3 - Article

AN - SCOPUS:0042145079

SN - 0021-4922

VL - 26

SP - 201

EP - 203

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

ER -

Monomorph characteristics of semiconductive piezoceramics

Abstract

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