Monte Carlo Simulations of the Bandwidth of InAlAs Avalanche Photodiodes

Feng Ma; Ning Li; Joe C. Campbell

doi:10.1109/TED.2003.818149

Monte Carlo Simulations of the Bandwidth of InAlAs Avalanche Photodiodes

Feng Ma, Ning Li, Joe C. Campbell

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We present a Monte Carlo simulation of the bandwidth of an InAlAs avalanche photodiode with an undepleted absorber. The carrier velocities are simulated in the charge layer and the multiplication region. It is shown that the velocity overshoot effect is not as significant as simpler models have suggested. At high electric field intensity, the electron effective saturation velocity is only slightly higher when impact ionization is significant, compared with when impact ionization is absent. The simulated 3 dB bandwidth is consistent with experiments for gains up to 50.

Original language	English (US)
Pages (from-to)	2291-2294
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	11
DOIs	https://doi.org/10.1109/TED.2003.818149
State	Published - Nov 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2003.818149

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abstract = "We present a Monte Carlo simulation of the bandwidth of an InAlAs avalanche photodiode with an undepleted absorber. The carrier velocities are simulated in the charge layer and the multiplication region. It is shown that the velocity overshoot effect is not as significant as simpler models have suggested. At high electric field intensity, the electron effective saturation velocity is only slightly higher when impact ionization is significant, compared with when impact ionization is absent. The simulated 3 dB bandwidth is consistent with experiments for gains up to 50.",

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AB - We present a Monte Carlo simulation of the bandwidth of an InAlAs avalanche photodiode with an undepleted absorber. The carrier velocities are simulated in the charge layer and the multiplication region. It is shown that the velocity overshoot effect is not as significant as simpler models have suggested. At high electric field intensity, the electron effective saturation velocity is only slightly higher when impact ionization is significant, compared with when impact ionization is absent. The simulated 3 dB bandwidth is consistent with experiments for gains up to 50.

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Monte Carlo Simulations of the Bandwidth of InAlAs Avalanche Photodiodes

Abstract

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